Compendium of Single Event Effect Results from NASA Goddard Space Flight Center

O'Bryan, Martha V.; LaBel, Kenneth A.; Szabo, Carl M.; Chen, Dakai; Campola, Michael J.; Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Ladbury, Raymond L.; Ikpe, Stanley A.; Pellish, Jonathan A.; Berg, Melanie D.

doi:10.1109/nsrec.2016.7891706

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…It is used in two space missions still in operation; CASSIOPE from the Canadian Space Agency [11] and TESS from NASA. NASA successfully tested the AD8038 SC70 response to destructive single event failure [12], and only a Total Ionizing Dose test might be required to qualify the AD8038 SC70 for the LISA mission.…”

Section: Design Descriptionmentioning

confidence: 99%

A DC-Coupled, HBT-Based Transimpedance Amplifier for the LISA Quadrant Photoreceivers

Barranco

Heinzel

2021

IEEE Trans. Aerosp. Electron. Syst.

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The quadrant photoreceivers (QPRs) in the Laser Interferometer Space Antenna (LISA) mission must feature an input-referred current noise below 2 pA Hz −1/2 at 25 MHz to avoid degradation of the signal-to-noise ratio. We present a QPR with a dc-coupled transimpedance amplifier (TIA) based on heterojunction bipolar transistors (HBTs). The QPR features an input-referred current noise density below 1.5 pA Hz −1/2 at 25 MHz, a 37 MHz bandwidth and a 56.2 mW power consumption. Additionally, the dc-coupled, HBT-based TIA allows the QPR to fulfill the size and interface requirements of the LISA mission.

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Section: Design Descriptionmentioning

confidence: 99%

A DC-Coupled, HBT-Based Transimpedance Amplifier for the LISA Quadrant Photoreceivers

Barranco

Heinzel

2021

IEEE Trans. Aerosp. Electron. Syst.

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“…Over the past several years, GSFGC and other institutions have been discussing the susceptibility of Schottky diodes to destructive (and nondestructive) single-event effects (SEEs) [1][2][3][4][5]. During the course of this work, four responses were observed in the diodes during the heavy-ion irradiations, and they are shown below (Figs.…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

Casey¹,

Lauenstein²,

Weachock

et al. 2018

IEEE Trans. Nucl. Sci.

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When a Schottky diode experiences enough degradation to cause the post-irradiation electrical parameter measurements to be out of specification, failure analysis appears to show that the damage occurs solely at the Schottky metal/silicon interface. This is in contrast to when a diode fails catastrophically. In that case, the event appears to also begin at the metal/silicon junction, however, the event generates such extreme heat that the materials become molten. A filament is then created that displaces the metal into the bulk silicon and can also displace silicon to the surface of the diode. This filament shorts the anode (bulk silicon) to the cathode (Schottky barrier metal) and the current is only limited by the power supply.To avoid these radiation responses in which the diode is operating outside of the manufacturer's specifications, a reverse voltage derating of 50% is recommended when testing will not be conducted. If testing will be conducted on the flight diodes under the application-specific bias conditions, then a derating similar to power MOSFETs is recommended, in which the maximum reverse voltage that may be used is 75% of the last passing voltage.In this work, we use high-and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

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COTS Devices for Space Missions in LEO

Brunetti,

Campiti,

Tagliente

et al. 2024

IEEE Access

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In the framework of the NewSpace revolution, time-to-market and budget constraints drive the development of small and medium-sized satellites in Low Earth Orbit (LEO) orbit. The adoption of Commercial Off-the-Shelf (COTS) components represents the current trend to fulfill the NewSpace goals, given their low cost, wide product availability, small time-to-market, and the ability to integrate the most recent advancements in space applications. However, migrating from radiation-hardened (rad-hard) devices to COTS ones requires ensuring comparable reliability levels. To this end, an "upscreening" of the COTS devices and systems should be performed in compliance with widely adopted standard regulations, such as those used by ESA or NASA. In this paper, we review COTS components and systems, such as diodes, Bipolar Junction Transistors (BJTs), Field Effect Transistors (FETs), Operational Amplifiers (OPAMPs), memories, and Field Programmable Gate Arrays (FPGAs), proven-flight or ad-hoc tested for compliance with standard regulations. In conclusion, the most promising devices in terms of cost and radiation tolerances are identified, providing useful benchmarks for space engineers developing COTS-based innovative systems.

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Compendium of Single Event Effect Results from NASA Goddard Space Flight Center

Abstract: We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Cited by 4 publications

References 12 publications

A DC-Coupled, HBT-Based Transimpedance Amplifier for the LISA Quadrant Photoreceivers

A DC-Coupled, HBT-Based Transimpedance Amplifier for the LISA Quadrant Photoreceivers

Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

COTS Devices for Space Missions in LEO

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