Compensation effects in C₆₀ doped by ion implantation

Abstract

We have studied electrical transport phenomena after ion implantation in sublimed CSO films. A n type doping exists with 30 KeV potassium ion irradiations and low fluences (D < 10'5ions/cm2). However degradation effects have been noted. So we have tried to discriminate doping and damage effects. Studies about the compensation phenomenum have been performed in order to prove the chemical role of the potassium atoms. An electron transfer from the alkali metal is sure; but a strong competition exists between degradation and doping phenomena. Finally, the intact CSO molecules are the insulator barriers, K$GO and isolated carbon atoms are the conductor phase for an heterogeneous media model.