Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2

西安电子科技大学微电子学院,; 西安交通大学,; 西安交通大学微电子学院,

doi:10.7498/aps.70.20211917

Acta Physica Sinica

2021

DOI: 10.7498/aps.70.20211917

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Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2

西安电子科技大学微电子学院西安电子科技大学微电子学院¹,

西安交通大学西安交通大学²,

西安交通大学微电子学院西安交通大学微电子学院³

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Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2

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References 22 publications

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