Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy

Piotrowski, J.; Djurić, Z.; Galus, W.; Jović, V.; Grudzień, M.; Djinovic, Z.; Nowak, Z.

doi:10.1016/0022-0248(87)90512-4

Cited by 26 publications

(10 citation statements)

References 7 publications

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“…at VIGO system [44,45]. A production−type reusable atmospheric pressure sys− tem for ISOVPE that allows a large area of multiple layers to be grown in one growth run is shown in Fig.…”

Section: Commercialization Of Hgcdte Detectorsmentioning

confidence: 99%

History of HgTe-based photodetectors in Poland

Rogalski

2010

Opto-Electronics Review

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In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe.Infrared detector’s research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

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“…at VIGO system [44,45]. A production−type reusable atmospheric pressure sys− tem for ISOVPE that allows a large area of multiple layers to be grown in one growth run is shown in Fig.…”

Section: Commercialization Of Hgcdte Detectorsmentioning

confidence: 99%

History of HgTe-based photodetectors in Poland

Rogalski

2010

Opto-Electronics Review

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“…A unique production-type atmospheric pressure system was developed in cooperation with Djuric's group from Belgrade University [37,38]. The epitaxial system ( Fig.…”

Section: Open Tube Isovpe Growthmentioning

confidence: 99%

Uncooled infrared photodetectors in Poland

Piotrowski

2006

Opto-Electronics Review

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The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche.Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE.Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

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“…On the basis of the experiments performed in IHTM-IMTM in an original single-zone semiclosed system, [61] presents the first rough qualitative description of a layer-deposition process using the ISOVPE method. Almost at the same time Fleming and Stevenson presented the thermodynamical and kinetical principles of the ISOVPE model [62].…”

Section: The History Of Isovpementioning

confidence: 99%

“…Almost at the same time Fleming and Stevenson presented the thermodynamical and kinetical principles of the ISOVPE model [62]. This model was based on experimental data from [61,62] and from other experiments by Fleming and Stevenson, and it was able to explain qualitatively the trends of this epitaxial-growth process. In later works [63,64,65] this group published a number of results that were of great importance for the further development of ISOVPE.…”

Section: The History Of Isovpementioning

confidence: 99%

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

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Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy

Cited by 26 publications

References 7 publications

History of HgTe-based photodetectors in Poland

History of HgTe-based photodetectors in Poland

Uncooled infrared photodetectors in Poland

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

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