Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization

Nallatamby, Jean-Christophe; Laurent, Sylvain; Prigent, Michel; Jacquet, Jean-Claude; Floriot, D.; Delage, S.

doi:10.1007/s10825-014-0639-z

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Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization

Cited by 4 publications

References 24 publications

Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism

Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT

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