Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.
DOI: 10.1109/ipfa.2005.1469139
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Comprehensive analysis of vacancy dynamics due to electromigration

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“…electromigration behavior. The stress distribution acts as an Basically, residual stresses develop due to the microstructure additional material transport force and causes anisotropy in evolution during metal layer deposition processes and days self-diffusion and electromigration [1,10]. and months aftermath [8].…”
mentioning
confidence: 99%
“…electromigration behavior. The stress distribution acts as an Basically, residual stresses develop due to the microstructure additional material transport force and causes anisotropy in evolution during metal layer deposition processes and days self-diffusion and electromigration [1,10]. and months aftermath [8].…”
mentioning
confidence: 99%