Semiconductors
 2011
DOI: 10.1134/s1063782611120141
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Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition

Yu. K. Undalov
1
,
Е. И. Теруков
2
,
O. B. Gusev
3
et al.
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