Contact resistance in graphene channel transistors

Song, Seung Min; Cho, Byung Jin

doi:10.5714/cl.2013.14.3.162

Cited by 37 publications

(40 citation statements)

References 80 publications

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“…Moreover, other information can be extracted by asymmetric transfer curves. If the transfer curve shows a larger resistance at the right side of the CNP, graphene at the contact interface is p-type doped promoting a preferential scattering of electrons [17,20,23]. Similary, if the transfer curve shows a larger resistance at the left side of the CNP, the opposite applies, and we can infer that graphene at the contact interface is n-type doped scattering holes more efficiently than electrons.…”

Section: -Experimental Methodsmentioning

confidence: 95%

“…By carefully analyzing figures 1(a)-(d), one can see that there is a preferential scattering of electrons in absence of H2 (all metallic contacts naturally promote a p-type doping of graphene near the leads). This statement is more evident in graphene/Cr/Au devices as shown in the black curve of figure 1(c) [17,20,23]. However, under exposure to H2 (red curves in figures 1(a)-1(c)), there is an inversion of the asymmetry of the transfer curves [23].…”

Section: -Experimental Methodsmentioning

confidence: 99%

“…Now, let us discuss the formation of the second CNP based on the literature. Previous works [17,43,46,49] That has been published in its final form: https://iopscience.iop.org/article/10.1088/2053-1583/ab0b23/meta are preserved, but charge transfer to or from the metallic electrodes can take place, modulating then the Fermi level at the region underneath the contacts [16,50]. Other works also demonstrate that the formation of oxide layer in between graphene and the electrodes could be the reason of multiple CNPs [27,48,49].…”

Section: Now We Investigate How the Formation Of Multiple Cnps Under mentioning

confidence: 99%

“…Figure 4(a) shows that effect of the molecular hydrogen when only Au metallic contacts are used. In this case, the G curve shows only one CNP and the asymmetry generated by the p-type doping induced by the Au-electrodes and pinning of the graphene work function by the metal [16,17,45]. In this case the Fermi energy (EF) level for the region underneath the contact remains fixed due to the charge density pinning, while the EF for the channel region can be tunable by the gate bias.…”

Section: Now We Investigate How the Formation Of Multiple Cnps Under mentioning

confidence: 99%

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Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface

Pereira¹,

Cadore²,

Rezende³

et al. 2019

2D Mater.

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In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing the type metal in the contact, we observe that Ohmic contacts can be strongly or weakly electrostatically coupled with graphene. For strongly coupled contacts, the signature of the charge transfer effect promoted by the contacts results on an asymmetric ambipolar conduction, and such asymmetry can be tunable under interaction with H2. On the other hand, for contacts weakly coupled with graphene, the hydrogen interaction has a more profound effect. In such situation, the devices show a second charge neutrality point in graphene transistor transfer curves (a double-peak response) upon H2 exposure. We propose that this double-peak phenomenon arises from the decoupling of the work function of graphene and that of the metallic electrodes induced by the H2 molecules. We also show that the gas-induced modifications at the metal-graphene interface can be exploited to create a controlled graphene p-n junction, with considerable electron transfer to graphene layer and significant variation in the graphene resistance. These effects can pave the way for a suitable metallic contact engineering providing great potential for the application of such devices as gas sensors.

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Section: -Experimental Methodsmentioning

confidence: 95%

Section: -Experimental Methodsmentioning

confidence: 99%

Section: Now We Investigate How the Formation Of Multiple Cnps Under mentioning

confidence: 99%

Section: Now We Investigate How the Formation Of Multiple Cnps Under mentioning

confidence: 99%

See 2 more Smart Citations

Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface

Pereira¹,

Cadore²,

Rezende³

et al. 2019

2D Mater.

View full text Add to dashboard Cite

show abstract

“…Therefore, due to large photoconductivity of graphene, we expect longer relaxation time compared to noble metals and lower dissipative losses similar to the graphene nanoribbon waveguides with plasmonic properties . In other words, graphene monolayer underneath the metallic particles acts as the charge transfer channel between the metallic (gold) and oxide (SiO 2 ) interfaces, has been previously confirmed and measured by Kelvin probe force microscopy . On the other hand, two distinct resonant peaks are induced at 0.43 and 0.31 eV correlating with the quadrupolar and dipolar modes supported by conductive graphene sublayer junction between nanodisks.…”

mentioning

confidence: 99%

Graphene Optical Switch Based on Charge Transfer Plasmons

Ahmadivand

Gerislioglu

Pala

2017

Physica Rapid Research Ltrs

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In the past decade, dynamic, tunable, compact, and fast plasmonic switches with high modulation depth (MD) and low losses have been developed successfully for various practical applications. Here, using a simple plasmonic dimer consisting of a pair of metallic nanodisks bridged to each other with a graphene monolayer, we develop a highly tunable plasmonic switch for telecommunication applications. We have shown that having active control on the photoconductivity of graphene sheet through electrical bias allows for transition of charges across the atomically thin bridge, giving rise to formation of charge transfer plasmon (CTP) modes. Such an interplay between semiconducting and semi‐metallic states of the graphene sublayer leads to direct control of the excited CTPs. By tuning the peak of CTP at the global telecommunication band (λ = 1550 nm), we designed an integrated, fast, and functional optoelectronic nanoswitch with high MD up to ≈98% and negligible losses. This study presents a promising approach to design tunable, high‐quality, integrated optoelectronic switches for next‐generation advanced nanophotonic applications.

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Scribing Graphene Circuits

Rodríguez

Ruiz

Márquez

et al. 2016

Future Trends in Microelectronics

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Ten years after the first graphene flakes were obtained by micromechanical cleavage method [1], this promising material still has not found any large-scale industrial application. In contrast, a countless variety of fabrication methods have been demonstrated for the production of graphene sheets of different quality, size and cost. This imbalance between the raw material availability and its practical use is threatening the bright future of graphene and turning it into the graphene bubble.We have explored the direct fabrication of graphene patterns by laser-assisted reduction of graphene oxide (GO), see Fig. 1(a) [2]. This method has many advantages over its counterparts, i.e. cheap, repeatable, and easy to implement in mass production … but its distinctive characteristic is the possibility to produce, without any mask, large graphene structures with micrometer resolution, as shown in Fig 1(b). While the quality is still limited by the purity of the starting GO solution (see Fig. 1(c)), the conductivity of the laser-scribed graphene is comparable, or even superior, to that of graphene sheets obtained with CVD methods, as shown in Fig. 1(d). A broad set of electrical results will be presented, including also the correlation between current noise spectral density and the graphene quality. We will disclose the path for future material optimization, focusing the discussion on flexible conductive structures.

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Contact resistance in graphene channel transistors

Cited by 37 publications

References 80 publications

Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface

Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface

Graphene Optical Switch Based on Charge Transfer Plasmons

Scribing Graphene Circuits

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