Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

Abstract

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is 200 % W −1 cm −2 , with a bandwidth of 2.67 nm in a 1 mm-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.