Control of Efficiency, Brightness, and Recombination Zone in Light‐Emitting Field Effect Transistors

Hsu, Ben B. Y.; Duan, Chunhui; Namdas, Ebinazar B.; Gutacker, Andrea; Yuen, Jonathan D.; Huang, Fei; Cao, Yong; Bazan, Guillermo C.; Samuel, Ifor D. W.; Heeger, Alan J.

doi:10.1002/adma.201103513

Cited by 84 publications

(77 citation statements)

References 24 publications

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“…[17～20] 、高效的场效应晶体管 [21] 以及场效应发光晶体管等 [22,23] , 显示了巨大的应用潜力. 与此同时, 非共轭的水/醇溶聚合物界面材料也在有机光电器件上得到了成功的应用, 实现了高效的聚合物发光器件 [24,25] , 聚合物太阳电池 [12,26,27] 等.…”

Section: %的高效聚合物太阳电池unclassified

Performance Study of Water/Alcohol Soluble Polymer Interface Materials in Polymer Optoelectronic Devices

Zhang¹,

Guan²,

Huang³

et al. 2012

Acta Chim. Sinica

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Four different water/alcohol soluble polymers, poly [9,9-bis(6-(N,N-diethylamino)-hexyl N-oxide)fluorene] (PF6NO), poly[9,9-bis(6-(N,N-diethylamino)-hexyl)fluorene] (PF6N), polyethylene oxide (PEO), polyethylene imine (PEI) were used as interlayer materials in polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs) with device structures of indium tin oxide (ITO)/poly(3,4-ethylenedioxylenethiophene):poly(styrenesulphonic acid) (PEDOT:PSS)/Active Layer/Interlayer/Al (or Au), where the green light-emitting polymer poly-[2-(4-(3',7'-dimethyloctyloxy)-phenyl)-p-phenylene vinylene] (P-PPV) and photovoltaic material poly-[N-9'-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3-benzothiadiazole) (PCDTBT):[6,6]-phenyl C 71-butyric acid methyl ester (PC 71 BM) were used as the light emitting layer and light absorption layers for PLEDs and PSCs, respectively. The relationships between chemical structure and optoelectronic properties of the polymer interlayer materials were systematically investigated. Photovoltaic measurement were used to determine the built-in potential across the devices and consequently to understand the interface modification abilities of these materials. It was found that the devices based on conjugated interlayer materials exhibited larger open circuit voltages than those of devices based on non-conjugated interlayer materials, which indicates that the conjugated interlayer materials lead to lower energetic barriers for electron. Device studies showed that the conjugated interlayer materials PF6NO and PF6N exhibited much better device performance both in PLEDs and PSCs compared to the non-conjugated interlayer materials PEO and PEI, which was consistent with the photovoltaic measurement results. PLEDs studies indicated that the devices based on non-conjugated interlayer materials PEO and PEI exhibited dramatically decreased efficiencies when the interlayers' thicknesses are more than 20 nm, while the devices based on conjugated interlayer materials PF6NO and PF6N maintained good performances. Moreover, both PLEDs and PSCs device studies indicated that the conjugated interlayer materials show a wide range of adaptability, which work well for both Al and Au electrode devices, while the non-conjugated interlayer materials only work well for the Al electrode devices. Our results indicated that besides the highly polar side chain groups, the conjugated interlayer materials' main chains also play an important role on their excellent interfacial modification ability, which lead to easily electron transporting and wide range of adaptability.

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Section: %的高效聚合物太阳电池unclassified

Performance Study of Water/Alcohol Soluble Polymer Interface Materials in Polymer Optoelectronic Devices

Zhang¹,

Guan²,

Huang³

et al. 2012

Acta Chim. Sinica

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“…The location of the emission zone was independent of the gate bias. In recent years, many literatures have been reported to adjust the charge carrier injection ability to improve the performance of OLEFET, like modify ordered polymer nanofibers [55], using the split gate [56], designing non-planar electrode device [57], doping carbon nanotubes [58], and so on.…”

Section: Light-emitting Field-effect Transistorsmentioning

confidence: 99%

Crystalline Organic Materials Toward Laser Application

Xie

Liu

2014

Nano-Optics and Nanophotonics

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Although optically pumped organic laser has been observed and investigated intensively in the past few decades, realization of electrically pumped organic laser is still a great challenge. Toward this challenge, efforts from both material science and device engineering research fields have been and will be made by scientists. In this chapter, the relationship between molecular stacking and optoelectronic properties in crystalline organic materials is discussed in detail first. Based on the deep understanding of the structure-property relationship, the recent progresses on highly efficient electroluminescent (EL) materials and light-emitting field-effect transistors are reviewed respectively. At last, a perspective is given on further development of organic materials and devices for laser application.

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“…After the invention of organic light-emitting diodes in 1990 1 , other organic optoelectronic devices have been demonstrated, such as lightemitting electrochemical cells (LEC) [2][3][4] and light-emitting transistors (LET) [5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

Half-gate light-emitting electrochemical transistor to achieve centered emissive organic p–n junction

Liu

Engquist

Berggren

2015

Organic Electronics

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Organic light-emitting electrochemical cells (LEC) are promising for lighting applications but in many cases these devices suffer from unbalanced electrochemical doping, which cause instability and degradation of the cells. A predominant p-doping over n-doping causes an off-centered emissive p-n junction, which leads to poor powerconversion efficiency. Here, we report a half-gate LEC transistor (HG-LECT), in which an ion-conductive gate made from poly(3,4-ethylenedioxythiophene)-poly-(styrenesulfonate) is employed to combat this instability problem. The gate material, covering half of the channel, is used to enhance the n-doping process in this part by employing an appropriate operation protocol. We demonstrate a centered light emission zone, closely following the geometry of the gate configuration. The HG-LECT with centered emission profile is shown to be more efficient than the corresponding LEC without the gate electrode, and its n-doping level is measured to be 15%.

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Control of Efficiency, Brightness, and Recombination Zone in Light‐Emitting Field Effect Transistors

Cited by 84 publications

References 24 publications

Performance Study of Water/Alcohol Soluble Polymer Interface Materials in Polymer Optoelectronic Devices

Performance Study of Water/Alcohol Soluble Polymer Interface Materials in Polymer Optoelectronic Devices

Crystalline Organic Materials Toward Laser Application

Half-gate light-emitting electrochemical transistor to achieve centered emissive organic p–n junction

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