2022
DOI: 10.1149/2162-8777/ac546d
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Control of the Micro-Defects on the Surface of Silicon Wafer in Chemical Mechanical Polishing

Abstract: The final polishing of silicon results in the irresistible formation of micro-defects (i.e., particle residues and scratches) on the surface. In view of this problem, the synergistic effect of surfactants and water-soluble polymers in inhibiting the micro-defects on the silicon surface was studied to improve the wettability of the slurry and reduce the micro-flocculation of abrasive particles. The results showed that the total number of residual particles (≥0.06 µm) on the polished surface was reduced from 24,… Show more

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Cited by 9 publications
(6 citation statements)
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References 26 publications
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“…Song et al [17] discovered that the nonionic surfactant polyethylene glycol improves the surface quality of wafers after polishing in wafer polishing. Zhao et al [18] demonstrated that cationic surfactants polyvinyl amide and AEO can inhibit the flocculation of abrasive grains and reduce scratches on the wafer surface during the adsorption of silica sol abrasive grains. Zhang et al [19] discovered that the inclusion of FA/O nonionic surfactants could considerably decrease the surface roughness of the wafer after CMP polishing.…”
Section: Introductionmentioning
confidence: 99%
“…Song et al [17] discovered that the nonionic surfactant polyethylene glycol improves the surface quality of wafers after polishing in wafer polishing. Zhao et al [18] demonstrated that cationic surfactants polyvinyl amide and AEO can inhibit the flocculation of abrasive grains and reduce scratches on the wafer surface during the adsorption of silica sol abrasive grains. Zhang et al [19] discovered that the inclusion of FA/O nonionic surfactants could considerably decrease the surface roughness of the wafer after CMP polishing.…”
Section: Introductionmentioning
confidence: 99%
“…For example, the fatty alcohol polyoxyethylene ether (AEO-9), tetramethylammonium hydroxide (TMAH) and other toxic substances as auxiliary additives were also added to the polishing slurry. 13,14 H 2 SO 4 and C 2 H 5 NH 2 were used to prepare a polishing slurry. The surface roughness after polishing in the range of 1 × 1 μm 2 was 0.544 nm as measured by AFM.…”
Section: Introductionmentioning
confidence: 99%
“…Hong et al 10 discovered that FA/O surfactants adsorbed on abrasive particles hinder contamination of the silicon wafer surface by the particles, resulting in lower surface haze, reduced roughness, scratch count, and particle contamination. Tang et al 11 investigated the role of surfactants in promoting the removal and corrosion inhibition of benzotriazole (BTA) during the post-CMP cleaning process. AEO-9 non-ionic surfactant was found to have strong penetration ability and could penetrate between Cu-BTA residues and the Cu surface, improving the cleaning effect.…”
mentioning
confidence: 99%
“…AEO-9 non-ionic surfactant was found to have strong penetration ability and could penetrate between Cu-BTA residues and the Cu surface, improving the cleaning effect. Zhao et al 11 found that when cationic polyacrylamide (CPAM) and AEO-9 were simultaneously added to the polishing solution, a synergistic effect of adsorption and separation occurred between the two components. As a result, a significant amount of SiO 2 particles were removed from the silicon wafer surface, leading to a significant reduction in the number of residual particles.…”
mentioning
confidence: 99%