2020 47th IEEE Photovoltaic Specialists Conference (PVSC) 2020
DOI: 10.1109/pvsc45281.2020.9300963
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Control over the Gallium Depth Profile in 30×30 cm2Sequentially Processed CIGS

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Cited by 3 publications
(1 citation statement)
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“…In this method of making these types of chalcogenide absorber layers, essentially a metal precursor of copper-gallium and indium is selenized (and/or sulfurized) with a solid or gaseous source. Next to valuable insights from the work of Intermolecular [6], some clarity on processing of pure selenide and pure sulfide variations of these chalcogenides has been recently offered by Solliane and imec, respectively [7,8]. On the other hand, as Kato et al suggested [9], every tool and fabrication design might need its own process optimization for best results.…”
Section: Introductionmentioning
confidence: 99%
“…In this method of making these types of chalcogenide absorber layers, essentially a metal precursor of copper-gallium and indium is selenized (and/or sulfurized) with a solid or gaseous source. Next to valuable insights from the work of Intermolecular [6], some clarity on processing of pure selenide and pure sulfide variations of these chalcogenides has been recently offered by Solliane and imec, respectively [7,8]. On the other hand, as Kato et al suggested [9], every tool and fabrication design might need its own process optimization for best results.…”
Section: Introductionmentioning
confidence: 99%