Controllable digital and analog resistive switching behavior of 2D layered WSe₂ nanosheets for neuromorphic computing

Abstract

The WSe2-based memristor demonstrates the controllable digital and analog resistive switching behavior. Moreover, it can be used to emulate the “learning-forgetting-relearning” experience and performs image recognition with high recognition accuracy.

Ionic Diffusive Nanomemristors with Dendritic Competition and Cooperation Functions for Ultralow Voltage Neuromorphic Computing

“…The PPF index curve can be fitted by an exponential eq (Figure e): normaly = C 1 × exp ( − Δ t t 1 ) + C 2 × exp ( − Δ t t 2 ) + C 0 where t 1 and t 2 represent relaxation time. In fact, similar to the most biological synapses, the distinction between the two facilitation states corresponding to t 1 and t 2 is not clear, thus the PPF index curve herein is similar to the fitting curve with one decay time. − It can be seen that the PPF index decreased as the presynaptic spike interval (△ t ) increased, and it reached 80% higher than the first pulse current when △ t was set as 50 ms.…”

High-performance artificial synapses based on two-dimensional MoSe2 powder with Se vacancies

“…This confirms that the main compositions of the powder are Mo and Se without impurity elements and the atomic ratio between Mo and Se is about 1 : 1.95, suggesting the presence of Se vacancies in the sample. 33,35 Fig. 2d shows the surface morphology of MoSe 2 , which indicates that these powders are uniformly distributed.…”

Memristors based on 2D MoSe2 nanosheets as artificial synapses and nociceptors for neuromorphic computing

“…However, the Se vacancies may form some discrete conductive filaments which can slightly decrease the resistance of the device and consequently give rise to the observed increase of current as the sweeping times increase. [34][35][36] When a positive voltage is applied to the device, the selenium vacancies gradually migrate to the opposite electrode and shorten the distance between the two electrodes, resulting in the gradual increase of current. The inset of Fig.…”