Controllable dissipative tunneling in an external electric field

Zhukovskii, V. Ch.; Горшков, О. Н.; Кревчик, В. Д.; Семенов, М. Б.; Groznaya, E. V.; Филатов, Д. О.; Антонов, Д. А.

doi:10.3103/s0027134909010068

Cited by 15 publications

(8 citation statements)

References 4 publications

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“…Finally, in the negative voltage region, we observed a characteristic single peak, which, as described in Ref. [9], is related to the singularity of the pre-exponential factor under conditions when the model potential becomes symmetric with the change of the external electric field that affects the magnitude of the potential asymmetry parameter.…”

Section: Experimental I-v Characteristics For Quasi-one-dimensional Asupporting

confidence: 70%

“…In addition, an appreciable contribution to the tunneling current can be provided by the tunneling probability, estimated to within a pre-exponential factor in Ref. [9]. [4].…”

Section: Experimental I-v Characteristics For Quasi-one-dimensional Amentioning

confidence: 86%

“…Numerical analysis of the system (10-11) also makes it possible to reveal a fine structure of the transition in the neighborhood of the bifurcation point, namely, the quantum beat regime for parallel transport of tunneling particles. As a result, the probability of 2D tunneling with exponential accuracy is defined as Γ = exp (−S), where S is given by expression (9), taking into account the solution of system (10)(11). Since we are interested in a qualitative comparison with the existing tunnel VAC for the system "cantilever needle -gold nanoclusters (quasi-one-dimensional Au-QD structures" (see Section 2), we are interested in the dependence Γ on the asymmetry parameter b * = b/a.…”

Section: A Qualitative Comparison Of the Obtained Experimental And Thmentioning

confidence: 99%

“…The conditions for the model applicability under consideration are due to the approach of a rarefied gas of pairs "instanton-anti-instanton" and have been discussed in [1][2][3][4][8][9][10][11][12][13][14]. In the model under consideration, the Coulomb effects can be suppressed if the starting energy of a particle in a QD substantially exceeds the energy of the Coulomb repulsion: U 0 e 2 a0+b0 .…”

Section: A Qualitative Comparison Of the Obtained Experimental And Thmentioning

confidence: 99%

“…Thus, generalizing the results of Refs. [1,9], we have obtained a qualitative comparison of the theoretical curves for the dissipative 2D-tunneling probability as a function of the applied electric field, taking into account the bifurcation point (at positive voltage) and the presence of a single peak in the case of a symmetric potential (with negative voltage) with separate experimental I-V characteristics for the "platinized cantilever needle -quantum dot (gold nanoclusters)" system, obtained by a group of co-authors from Nizhny Novgorod State University, named by N. I. Lobachevsky. These results are shown in Fig.…”

Section: A Qualitative Comparison Of the Obtained Experimental And Thmentioning

confidence: 99%

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A comparative analysis of the observed effects of 2D tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional Au–QD systems in an external electric field

Семенов¹,

Кревчик²,

Горшков³

et al. 2018

Nanosystems: Phys. Chem. Math.

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The effects of 2D tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional Au-quantum dot (QD) arrays in thin dielectric films in an external electric field have been studied theoretically and experimentally by Conductive Atomic Force Microscopy (CAFM). In the case of quasi-one-dimensional Au-QD structures (with the QD size ∼ 5 nm), in a dielectric film, a single break under positive bias polarity, corresponding to the effect of 2D tunneling bifurcation, previously predicted theoretically by our team [1], has been detected in experimental I-V curves of the CAFM probe-to-sample contact. A convincing qualitative agreement between the obtained experimental I-V curves and the theoretical field dependence for the 2D-dissipative tunneling probability in the model 2D-oscillator potential has been obtained for the case of parallel tunneling in the weak-dissipation limit at a finite temperature in an external electric field. In the case of quasi-two-dimensional structures with Au QD (with the QD sizes of 2 to 5 nm), possessing metamaterial properties, a pair of kinks corresponding to the double effect of 2D-tunneling bifurcations has been detected on the experimental I-V curves. A qualitative agreement between the experimental I-V curves and the theoretical field dependence for the 2D-dissipative tunneling probability has been obtained for a situation with an effectively "negative" permittivity of the heat bath.

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Section: Experimental I-v Characteristics For Quasi-one-dimensional Asupporting

confidence: 70%

“…In addition, an appreciable contribution to the tunneling current can be provided by the tunneling probability, estimated to within a pre-exponential factor in Ref. [9]. [4].…”

Section: Experimental I-v Characteristics For Quasi-one-dimensional Amentioning

confidence: 86%

Section: A Qualitative Comparison Of the Obtained Experimental And Thmentioning

confidence: 99%

Section: A Qualitative Comparison Of the Obtained Experimental And Thmentioning

confidence: 99%

Section: A Qualitative Comparison Of the Obtained Experimental And Thmentioning

confidence: 99%

See 3 more Smart Citations

A comparative analysis of the observed effects of 2D tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional Au–QD systems in an external electric field

Семенов¹,

Кревчик²,

Горшков³

et al. 2018

Nanosystems: Phys. Chem. Math.

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show abstract

Macroscopic effects of dissipative tunneling in semiconductive InAs/GaAs quantum dots

Кревчик

Семенов

Shorokhov

et al. 2019

J. Phys.: Conf. Ser.

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Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer

Кревчик

Семенов

Shorokhov

et al. 2021

J. Phys.: Conf. Ser.

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We report on the results of experimental studies of the photocurrent (PC) of photodiodes based on GaAs p-i-n structures with InAs/GaAs(001) double asymmetric quantum dot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). Three peaks were observed in the dependence of the PC on the reverse bias, measured under photoexcitation with a photon energy equal to the energy of the interband ground state transition in larger InAs QDs. These peaks were attributed to photoexcitation of electrons from the ground hole states in larger QDs into the ground electron states followed by resonant dissipative (with absorption or emission of optical phonons) and conservative tunneling into the GaAs conduction band via the ground electron states in smaller QDs. The PC dependence on the bias voltage agrees qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between the QDs.

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Controllable dissipative tunneling in an external electric field

Cited by 15 publications

References 4 publications

A comparative analysis of the observed effects of 2D tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional Au–QD systems in an external electric field

A comparative analysis of the observed effects of 2D tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional Au–QD systems in an external electric field

Macroscopic effects of dissipative tunneling in semiconductive InAs/GaAs quantum dots

Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer

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