Controllable Growth of Vertically Aligned Aluminum-Doped Zinc Oxide Nanorod Arrays by Sonicated Sol–Gel Immersion Method depending on Precursor Solution Volumes

Mamat, Mohamad Hafiz; Khusaimi, Z.; Musa, M.Z.; Bakar, Suriani Abu; Siran, Yosri Mohd; Rejab, Syahril Anuar M.; Asis, Ahmad Jaril; Tahiruddin, Shawaluddin; Abdullah, Saifollah; Mahmood, Mohamad Rusop

doi:10.7567/jjap.50.06gh04

Cited by 33 publications

(9 citation statements)

References 42 publications

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“…Lin et al reported a zinc oxide ALD on multiwalled carbon nanotubes for UV photodetector applications. 41 Al-doped ZnO nanorod arrays were also reported by Mamat et al 38 for UV photodetection. Lin et al 42 reported on a photoconductor device that was sensitive to illumination with below-gap light by electrospinning of a single Al doped-ZnO (AZO) nanowire followed by a calcination process at 550 C for 3 h to obtain well-aligned polycrystalline AZO nanowires.…”

Section: A Introductionmentioning

confidence: 77%

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ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

et al. 2014

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We explored for the first time the ability of a three-dimensional polyacrylonitrile/ZnO material prepared by a low-cost and scalable synthesis method based on the combination of electrospinning and atomic layer deposition (ALD) as a new material with a large surface area to enhance the performance of UV photodetection. The UV photoresponse current was enhanced by a factor of 250 compared to a flat electrode. In addition an increase by a factor of 1.3 of the recovery time has been observed which is negligible versus the huge amount of current enhancement. The greatly improved performance and the good stability of these nanostructured electrodes induce exciting materials for use in UV sensor applications. A IntroductionUV photodetection has been widely studied in the last few years 1-10 due to its large civil and military application elds such as secure space-to-space communications, pollution monitoring, water sterilization, and ame sensing. The semiconductor based UV photodetection process is a simple physical phenomenon based on electron-hole generation into a semiconductor under photon shelling. Basically when a photon with energy larger than the one of the semiconductor band-gap is absorbed, an electron-hole pair is produced. This induces a change of the electrical conductivity properties of the semiconductor. Low band gap energy semiconductors have been widely used for UV photodetection, especially the Si-based photodetectors (E g ¼ 1.1 eV). Despite both their high sensitivity and quick response advantages, low E g UV photodetectors are sensitive to low energy photons (visible and infrared), and thus, they require the insertion of protection lters to avoid signal/ noise related to those low electron energies. Moreover an ultrahigh vacuum and a very high voltage supply were required. 11 The disadvantages of the low E g based photodetectors disappear in the high band gap semiconductors. Moreover, wide-band gap materials are both chemically and thermally stable which is an advantage for devices operating in harsh environments. [12][13][14] Among the high band gap semiconductor category, ZnO is one of the most widely used semiconductors for UV photodetection due to its high chemical stability, low cost, and large band gap of 3.37 eV at room temperature. Mollow et al. reported the rst UV photoresponse in ZnO lms in 1940. 15 Since then, many complex ZnO-based photodetectors with high performance have been reported, such as p-n junction, p-i-n junction and Schottky junction. 3,16-23 ZnO UV sensors have been prepared using different deposition techniques such as Metal Organic Chemical Vapor Phase Deposition (MOCVD), 24,25 laser assisted molecular beam deposition (LAMBD), 26 radio frequency (RF) magnetron sputtering, 27-29 atomic-layer deposition (ALD) 30 and molecular beam epitaxy (MBE). 31,32 Moreover different electrode types such as Au, Ag, Pt, Ni, Pd, Cr, Al, and Ru have been elaborated and their performances have been investigated. Nanostructured ZnO for UV detection was also investigated. They show promisi...

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Section: A Introductionmentioning

confidence: 77%

“…37 Aluminiumdoped ZnO nanorod arrays were also developed for UV photodetection. 38 According to Suobai et al, 39 the photoresponse current increases linearly with the number of nanowires (NWs) connected in parallel. A signicant improvement in fast response and recovery times was also reported.…”

Section: A Introductionmentioning

confidence: 99%

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

et al. 2014

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“…It has been reported that the post-annealing process in O 2 remarkably improves the crystallinity of ZnO samples grown at low temperature growth techniques, i.e. , hydrothermal or sol-gel method [45,46]. Since the growth temperature by this thermal evaporation technique is considerably higher, the effect of the post-annealing process may not be significant.…”

Section: Resultsmentioning

confidence: 99%

Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

et al. 2012

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The formation of high-density zinc oxide (ZnO) nanorods on porous silicon (PS) substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn) powder in the presence of oxygen (O2) gas was systematically investigated. The high-density growth of ZnO nanorods with (0002) orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnOx seeds as nucleation sites for the subsequent growth of ZnO nanorods. The geometrical morphologies of ZnO nanorods are determined by the ZnOx seed structures, i.e., cluster or layer structures. The flower-like hexagonal-faceted ZnO nanorods grown at 600 °C seem to be generated from the sparsely distributed ZnOx nanoclusters. Vertically aligned hexagonal-faceted ZnO nanorods grown at 800 °C may be inferred from the formation of dense arrays of ZnOx clusters. The formation of disordered ZnO nanorods formed at 1000 °C may due to the formation of a ZnOx seed layer. The growth mechanism involved has been described by a combination of self-catalyzed vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism. The results suggest that for a more precise study on the growth of ZnO nanostructures involving the introduction of seeds, the initial seed structures must be taken into account given their significant effects.

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“…In fact, the functional groups present in the cellulose fibers act as nucleation sites for the growth of nanorods (step 1 in Figure 6 ). It can be noted that in HMT-based hydrothermal synthesis, Zn(OH) 2 acts as the nucleation agent according to the following equations: 53 or …”

Section: Resultsmentioning

confidence: 99%

Nanoceutical Fabric Prevents COVID-19 Spread through Expelled Respiratory Droplets: A Combined Computational, Spectroscopic, and Antimicrobial Study

Adhikari

Pal

Bayan

et al. 2021

ACS Appl. Bio Mater.

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Centers for Disease Control and Prevention (CDC) warns the use of one-way valves or vents in face masks for potential threat of spreading COVID-19 through expelled respiratory droplets. Here, we have developed a nanoceutical cotton fabric duly sensitized with non-toxic zinc oxide nanomaterial for potential use as a membrane filter in the one-way valve for the ease of breathing without the threat of COVID-19 spreading. A detailed computational study revealed that zinc oxide nanoflowers (ZnO NFs) with almost two-dimensional petals trap SARS-CoV-2 spike proteins, responsible to attach to ACE-2 receptors in human lung epithelial cells. The study also confirmed significant denaturation of the spike proteins on the ZnO surface, revealing removal of the virus upon efficient trapping. Following the computational study, we have synthesized ZnO NF on a cotton matrix using a hydrothermal-assisted strategy. Electron-microscopic, steady-state, and picosecond-resolved spectroscopic studies confirm attachment of ZnO NF to the cotton (i.e., cellulose) matrix at the atomic level to develop the nanoceutical fabric. A detailed antimicrobial assay using Pseudomonas aeruginosa bacteria (model SARS-CoV-2 mimic) reveals excellent antimicrobial efficiency of the developed nanoceutical fabric. To our understanding, the nanoceutical fabric used in the one-way valve of a face mask would be the choice to assure breathing comfort along with source control of COVID-19 infection. The developed nanosensitized cloth can also be used as an antibacterial/anti CoV-2 washable dress material in general.

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Controllable Growth of Vertically Aligned Aluminum-Doped Zinc Oxide Nanorod Arrays by Sonicated Sol–Gel Immersion Method depending on Precursor Solution Volumes

Cited by 33 publications

References 42 publications

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

Nanoceutical Fabric Prevents COVID-19 Spread through Expelled Respiratory Droplets: A Combined Computational, Spectroscopic, and Antimicrobial Study

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