Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms
D. M. Hoat,
R. Ponce-Pérez,
Chu Viet Ha
et al.
Abstract:Controlling the electronic and magnetic properties of two-dimensional (2D) materials is a key step to make new multifunctional candidates for practical applications. In this work, defects and doping with transition...
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