Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates

Kunz, Thomas; Burkert, I.; Auer, R.; Lovtsus, A.A.; Талалаев, Р.А.; Makarov, Yu.N.

doi:10.1016/j.jcrysgro.2007.12.027

Cited by 13 publications

(7 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The layers were deposited by convection assisted chemical vapor deposition (CoCVD) in a large-area deposition system as described in Ref. 10. The silicon substrates were float-zone, 100 mm in diameter.…”

Section: Mono-crystalline Samples For Calibrationmentioning

confidence: 99%

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Kunz

Hessmann

Seren

et al. 2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective J. Appl. Phys. 112, 123517 (2012) Band bending and determination of band offsets in amorphous/crystalline silicon heterostructures from planar conductance measurements J. Appl. Phys. 112, 123717 (2012) A transition of three to two dimensional Si growth on Ge (100) substrate J. Appl. Phys. 112, 126101 (2012) Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metalinduced layer exchange J. Appl. Phys. 112, 123509 (2012) Additional information on J. Appl. Phys. Micro-Raman spectroscopy has been used to investigate the acceptor distribution in highly p-doped silicon. As an example, the dopant distribution in crystalline thin-film layers, as developed for solar cells, was mapped. The method is based on the analysis of the Fano-type Raman peak shape which is caused by free charge carriers. For calibration of the Raman acceptor measurements (excitation at a wavelength of 532 nm), we used mono-crystalline reference samples whose acceptor concentration was determined by electrochemical capacitance voltage. We find a significant influence of light induced free charge carriers on the peak shape which results from typical Raman excitation. Thus, the selection of a suitable intensity is important to avoid a too low signal-to-noise ratio on the one hand and systematic errors due to light induced carriers on the other hand. Different evaluation methods, i.e., peak asymmetry versus peak width analysis, are compared in respect to interference caused by random noise of the spectra or else by internal stress in the sample. While the width analysis method is more robust to a low signal-to-noise ratio, the symmetry analysis is more reliable in case of high intrinsic stress. V C 2013 American Institute of Physics. [http://dx

show abstract

Section: Mono-crystalline Samples For Calibrationmentioning

confidence: 99%

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Kunz

Hessmann

Seren

et al. 2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…By boron doping an acceptor concentration of 4 Â 10 18 cm À 3 is obtained. The layers were deposited by convection assisted chemical vapor deposition (CoCVD) in a large-area deposition system as described in [14].…”

Section: Introductionmentioning

confidence: 99%

Micro-Raman mapping on layers for crystalline silicon thin-film solar cells

Kunz

Hessmann

Meidel

et al. 2011

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…The SiC layer with a thickness of 10 μm was deposited using a hot-wall chemical vapor deposition, which covered both surfaces of the substrate to prevent the diffusion of impurities. Then, a p + -Si layer (acceptor concentration of 4 × 10 18 cm −3 ) approximately 20 μm thick was deposited on top of the SiC layer using a convectionassisted chemical vapor deposition (CoCVD) [29]. The p + -Si layers served as a seed and back surface field layer.…”

Section: Solar Cell Design and Processingmentioning

confidence: 99%

Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

Wittmann

Kunz

et al. 2015

EPJ Photovolt.

View full text Add to dashboard Cite

Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V ) measurement, quantum efficiency (QE) and light beam induced current (LBiC) are used as characterization methods.

show abstract

Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates

Cited by 13 publications

References 6 publications

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Micro-Raman mapping on layers for crystalline silicon thin-film solar cells

Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

Contact Info

Product

Resources

About