Convective and Absolute Instabilities in Semiconductors Exhibiting Negative Differential Mobility

Guéret, P.

doi:10.1103/physrevlett.27.256

Cited by 28 publications

(17 citation statements)

References 5 publications

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“…Nevertheless F (z, t) also grows exponentially in the range z < z 0 provided −γ > v 2 0 /4D 0 . This can be interpreted as the occurrence of an absolute instability [193] for…”

Section: Continuum Limit and Fronts Traveling Backwardsmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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Electric transport in semiconductor superlattices is dominated by pronounced negative differential conductivity. In this report the standard transport theories for superlattices, i.e. miniband conduction, Wannier-Stark-hopping, and sequential tunneling, are reviewed in detail. Their relation to each other is clarified by a comparison with a quantum transport model based on nonequilibrium Green functions. It is demonstrated how the occurrence of negative differential conductivity causes inhomogeneous electric field distributions, yielding either a characteristic sawtooth shape of the current-voltage characteristic or self-sustained current oscillations. An additional ac-voltage in the THz range is included in the theory as well. The results display absolute negative conductance, photon-assisted tunneling, the possibility of gain, and a negative tunneling capacitance. 2 Notation and list of symbolsThroughout this work we consider a superlattice, which is grown in the z direction. Vectors within the (x, y) plane parallel to the interfaces are denoted by bold face letters k, r, while vectors in 3 dimensional space are r, k, . . . . All sums and integrals extend from −∞ to ∞ if not stated otherwise.The following relations are frequently used in this work and are given here for easy reference:

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“…Nevertheless F (z, t) also grows exponentially in the range z < z 0 provided −γ > v 2 0 /4D 0 . This can be interpreted as the occurrence of an absolute instability [193] for…”

Section: Continuum Limit and Fronts Traveling Backwardsmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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“…where the threshold velocity vT, valley velocity vv, threshold field ET, valley field Ev, low-field mobility pol and negative differential mobility -pl(pl>O) are related according to VT = POET ( 8 ) and…”

Section: B the Piecewise Linear V(e)mentioning

confidence: 99%

“…s and p l = 2300 cm2/V. s according to (8) and (9), respectively. These values approximate the input data used in the numerical calculations.…”

Section: B the Piecewise Linear V(e)mentioning

confidence: 99%

“…Moreover, a small-signal analysis of GuCret [8] has led to the following criterion for a diffusion-dominated anode nonuniformity to nucleate a stationary high-field layer: …”

Section: Introductionmentioning

confidence: 99%

“…This criterion for absolute instability [8] suggests that the stationary anode layer should appear for doping levels exceeding a diffusion-dependent lower limit. This conclusion agrees with time-domain compu.ter studies by Thim [9] and by Gu6ret and Reiser [lo], in which switching to a low-current stable state with anode-layer formation takes place for doping levels above a lower limit given approximately by criterion…”

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confidence: 97%

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A simple analysis of the stable field profile in the supercritical TEA

Jeppesen

Jeppsson

1973

IEEE Trans. Electron Devices

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Abstracf-An analytical investigation supported by numerical calculations has been performed of the stable field profile in a supercritical diffusion-stabilized n-GaAs transferred electron amplifier (TEA) with ohmic contacts. In the numerical analysis, the field profile is determined by solving the steady-state continuity and Poisson equations. The diffusion-induced short-circuit stability is checked by performing time-domain computer simulations under constant voltage conditions. The analytical analysis based on simplifying assumptions gives the following results in good agreement with the numerical results. 1) A minimum doping level required for stability exists, which is inversely proportional to the field-independent diffusion coefficient assumed in the simple analysis.2) The dc current is bias independent and below the threshold value, and the current drop ratio increases slowly and almost linearly with the doping level. 3)The domain width normalized to the diode length L varies almost linearly with ( V~/ V~--l where VB is the bias voltage, VT is the threshold voltage, and no is the doping level. 4 ) The peak domain field varies almost linearly with (VB/ VT-l)t (n&)$. Those results contribute t o the understanding of the high nol-product switch and the stability of the supercritical TEA.

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Two-stream instability in n-type Gallium Arsenide

Guha¹,

Sen²

1977

Phys. Stat. Sol. (a)

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Based on the hydrodynamical model of plasmas, analytically two‐stream instability (both temporal and convective) is investigated in the range of the electric field from 3000 to 3375 V cm−1 at which the electron concentration in the satellite valley is comparable to that at the central valley. One of the modes (in each case of temporal or convective instability) is found to be unstable and propagates in the forward direction extracting energy from the medium when the phase velocity is smaller than the drift velocity of the electrons in the central valley. The variation of the growth rate, real part of the longitudinal electrokinetic power flow density, and the phase velocity are studied with the propagation constant, the wave angular frequency, the applied electric field and the carrier concentration.

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Convective and Absolute Instabilities in Semiconductors Exhibiting Negative Differential Mobility

Cited by 28 publications

References 5 publications

Semiconductor superlattices: a model system for nonlinear transport

Semiconductor superlattices: a model system for nonlinear transport

A simple analysis of the stable field profile in the supercritical TEA

Two-stream instability in n-type Gallium Arsenide

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