Coplanar and non-coplanar x-ray reflectivity characterization of lateral W/Si multilayer gratings

Mikulı́k, Petr; Jergel, M.; Baumbach, Tilo; Majková, E.; Pinčík, Emil; Luby, Š.; Ortéga, L.; Tucoulou, R.; Hudek, P.; Kostič, I.

doi:10.1088/0022-3727/34/10a/339

Cited by 37 publications

(32 citation statements)

References 7 publications

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“…The general features of the GISAXS pattern are similar to those exhibited by other polymer gratings which have been previously described [20,25,26]. In short, two main contributions can be considered in this pattern.…”

Section: Resultssupporting

confidence: 79%

Morphology of poly(propylene azelate) gratings prepared by nanoimprint lithography as revealed by atomic force microscopy and grazing incidence X-ray scattering

Soccio

Rueda

García-Gutiérrez

et al. 2015

Polymer

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Section: Resultssupporting

confidence: 79%

Morphology of poly(propylene azelate) gratings prepared by nanoimprint lithography as revealed by atomic force microscopy and grazing incidence X-ray scattering

Soccio

Rueda

García-Gutiérrez

et al. 2015

Polymer

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“…In the perfectly parallel alignment of the projected incident beam and grating lines, the GISAXS pattern consists of sharp spots aligned on a semicircle, equidistantly spaced along q y . The pattern can be understood within the framework of reciprocal space construction [50]. The semicircular shape is a consequence of the condition of elastic scattering, | k i | = | k f | with a radius of 2π/λ (Ewald sphere).…”

Section: Theorymentioning

confidence: 99%

Traceable GISAXS measurements for pitch determination of a 25 nm self-assembled polymer grating

et al. 2014

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The feature sizes of only a few nanometers in modern nanotechnology and next-generation microelectronics continually increase the demand for suitable nanometrology tools. Grazing incidence small-angle X-ray scattering (GISAXS) is a versatile technique to measure lateral and vertical sizes in the nm-range, but the traceability of the obtained parameters, which is a prerequisite for any metrological measurement, has not been demonstrated so far. In this work, the first traceable GISAXS measurements, demonstrated with a self-assembled block copolymer grating structure with a nominal pitch of 25 nm, are reported. The different uncertainty contributions to the obtained pitch value of 24.83(9) nm are discussed individually. The main uncertainty contribution results from the sample-detector distance and the pixel size measurement, whereas the intrinsic asymmetry of the scattering features is of minor relevance for the investigated grating structure. The uncertainty analysis provides a basis for the evaluation of the uncertainty of GISAXS data in a more general context, for example in numerical data modeling.

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“…The diffraction of line gratings can be understood qualitatively using reciprocal space construction (Mikulík et al, 2001;Yan and Gibaud, 2007). The three-dimensional Fourier transform of the periodically spaced grating lines are grating truncation rods, and their intersection with the Ewald sphere of elastic scattering are the diffraction orders.…”

Section: Grating Diffractionmentioning

confidence: 99%

Extracting dimensional parameters of gratings produced with self-aligned multiple patterning using grazing-incidence small-angle x-ray scattering

Pflüger

Kline

Herrero

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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To ensure consistent and high-quality semiconductor production, additional metrology tools are needed to measure the smallest structures. Due to its high statistical power and the well-known X-ray optical constants, small-angle X-ray scattering (SAXS) is being considered for this purpose. Compared to transmission SAXS, signal intensities can be enhanced dramatically by using small incidence angles in reflection geometry (Grazing-Incidence SAXS, GISAXS), enabling quick measurements. The capability to reconstruct average line shapes from GISAXS measurements of gratings has already been proven. However, GISAXS has so far not been used to reconstruct line shapes of gratings with pitches smaller than 50 nm, which are standard in current-generation semiconductor manufacturing. In this paper, GISAXS is used to reconstruct the line profile of a grating with 32 nm pitch produced by self-aligned quadruple patterning (SAQP). It is found that the reconstructed shape is generally in agreement with previously published SAXS results. However, the reconstructed line height and line width show deviations of 1.0(2) nm and 2.0(7) nm, respectively. Additionally, a series of grating samples with deliberately introduced pitchwalk was measured. Here, it is found that GISAXS yields the pitchwalk in agreement with the SAXS results, with uncertainties ranging from < 0.5 nm for small pitchwalks (< 2 nm) up to ≈ 2 nm for larger pitchwalks.

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Coplanar and non-coplanar x-ray reflectivity characterization of lateral W/Si multilayer gratings

Cited by 37 publications

References 7 publications

Morphology of poly(propylene azelate) gratings prepared by nanoimprint lithography as revealed by atomic force microscopy and grazing incidence X-ray scattering

Morphology of poly(propylene azelate) gratings prepared by nanoimprint lithography as revealed by atomic force microscopy and grazing incidence X-ray scattering

Traceable GISAXS measurements for pitch determination of a 25 nm self-assembled polymer grating

Extracting dimensional parameters of gratings produced with self-aligned multiple patterning using grazing-incidence small-angle x-ray scattering

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