Copper diffusion and photovoltaic mechanisms at Cu-CdS contact

Nguyen, Pham Dinh; Boutrit, C.; Ravelet, S.

doi:10.1088/0022-3727/12/11/020

Cited by 12 publications

(8 citation statements)

References 12 publications

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“…It is known that the height of the barrier increases if there are surface states [29]. The sample produced at 200 K substrate temperature has smaller particle size compared to the sample produced at 300 K substrate temperature, which causes higher grain boundaries and therefore surface states [33]. Saturation current values were found to be the lowest in the heterojunction produced at 200 K substrate temperature.…”

Section: Resultsmentioning

confidence: 93%

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The investigation of stability of n-CdS/p-Cu₂S solar cells prepared by cold substrate method

Manir¹,

Nevruzoğlu²,

Tomakin³

2021

Semicond. Sci. Technol.

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In this study, two different n-CdS/p-Cu2S solar cells were prepared by evaporating Cu at different substrate temperatures (200 K and 300 K) by vacuum evaporation method on a single crystal CdS semiconductor. Field emission scanning electron microscope images showed that the Cu layer obtained at a temperature of 200 K was composed of nanoparticles in accordance with the soliton growth mechanism. Cu film thickness was determined as 395 ∓ 0.76 nm at 300 K substrate temperature and 187 ∓ 0.45 nm at 200 K substrate temperature. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the solar cells were examined for 12 weeks in dark and light environments. Open-circuit voltage (V oc), short-circuit current (I sc), maximum power (P max), filling factor and efficiency (η) were calculated from I–V measurements. For the prepared solar cells, the highest efficiency value was obtained in the 7th week (η= 0.1360) at 200 K substrate temperature, while it was obtained in the 5th week (η = 0.0384) at 300 K substrate temperature. From C–V measurements, donor density (N d) and barrier potential (V bi) were calculated. The solar cell produced at 200 K substrate temperature has higher donor density (1st week 2.99 × 1016 cm−3) and barrier potential values (12th week 0.411 V). At the end of the 12-week period, the deterioration rate of solar cells created at 200 K and 300 K substrate temperatures was 51% and 94%, respectively.

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Section: Resultsmentioning

confidence: 93%

“…where A * is the theoretical Richardson constant (23 A cm −2 K −2 for CdS) [33], A is the diode area (A = 0.07 cm 2 ) and ϕ b is the zero bias barrier height. ϕ b is calculated by the following formula,…”

Section: Resultsmentioning

confidence: 99%

The investigation of stability of n-CdS/p-Cu₂S solar cells prepared by cold substrate method

Manir¹,

Nevruzoğlu²,

Tomakin³

2021

Semicond. Sci. Technol.

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“…We consider here the diffusion of Cd, Cl, S, Te and Cu interstitials and vacancies of Cd and S. Detailed structural information provided here can only be obtained from reliable DFT computations. It is complementary to results of experimental observations where activation energies are measured indirectly leading to deduction of diffusion barriers [32][33][34][35][36][37][38][39][40][41][42]. The interstitial diffusion paths considered in this work were chosen parallel to c-axis.…”

Section: Interstitial Diffusionmentioning

confidence: 90%

“…The 0.66 eV value for Cu is in good agreement with experiment. The range of experimental values can be attributed to the different techniques used to determine the barriers including capacitive measurements [32,33], tracer [34] and optical absorption technique [35]. The calculated diffusion barrier for a Cl interstitial of 0.76 eV is large and this should be viewed as an upper bound for what can happen for diffusion in non-ideal crystals with planar defects such as grain boundaries.…”

Section: Diffusion Barrier and Strain Energymentioning

confidence: 99%

Diffusion in CdS of Cd and S vacancies and Cu, Cd, Cl, S and Te interstitials studied with first-principles computations

Roehl

Liu

Khare

2014

Mater. Res. Express

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We present an ab initio study of the diffusion profiles in CdS of native, Cd and S vacancies, and interstitial adatoms Cd, S, Te, Cu, and Cl. The global minimum and saddle point positions in the bulk unit cell vary for different diffusing species. This results in a significant variation, in the bonding configurations and associated strain energies of different extrema positions along the diffusion paths for various defects. The rate-limiting diffusion barriers range from a low of 0.42 eV for an S interstitial to a high of 2.18 eV for a S vacancy. The ratelimiting barrier is 0.66 eV for Cu and Te interstitials, 0.76 eV for Cl interstitial, 0.87 eV for Cd interstitial and 1.09 eV for the Cd vacancy. The 0.66 eV barrier for a Cu interstitial is in good agreement with experimental values in the range of 0.58-0.96 eV reported in the literature. We report an electronic signature in the projected density of states for the s-and d-states of the Cu interstitial at the saddle point and global minimum energy position. In addition, we have examined the relative charge transfer experienced by the interstitials at the extrema positions through Bader analysis.techniques have allowed CdTe/CdS solar cells to emerge as a leader in the growing market of thin film module production. A number of difficulties have slowed the further improvement of CdTe/CdS thin film technologies. These include the accumulation of Cu, from the back contacts, at the CdTe/CdS interface as well as intrinsic and exotic interstitials originating in CdS and diffusing interstitials from CdTe that cross the interface into the CdS layer affecting the cell performance. The diffusion of Cu into, and its accumulation at, the CdS layer has been the most suspected cause inhibiting long term device stability [3]. All CdS/CdTe cells are exposed to processing temperatures of at least 350°C during CdCl 2 treatment and a chemical reaction between CdTe and CdS can occur, which is the driving force for bulk and grain-boundary interdiffusion of CdTe and CdS [4]. Diffusion of Cd and Te atoms from the CdTe absorption region into CdS can reduce the light transmission capability of the window in the wavelength region of 500-650 nm. The faster process of diffusion of Cd and S atoms into CdTe, in the opposite direction, is more difficult to control, especially for cell structures with ultrathin CdS films [4]. The effect of Cl in CdS is also well known. Secondary ion mass spectrometry measurements suggest that the high Cl concentration in CdS films yields better solar cell efficiency [5]. Thus, it is well known that semiconductor properties, and hence overall cell efficiencies, are affected by the presence of defects in these layers [6,7]. To be able to control the defect concentration and mobility of defects in CdS requires understanding of their migration pathways by diffusion in CdS and the structural and electronic properties of these defects. Revealing these bulk diffusion pathways directly is challenging by current experimental techniques alone. These results can be of benef...

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“…Експериментально виявлено [3][4][5], що хімічні методи отримання сульфіду міді, які базуються на реакції заміщення на поверхні сульфіду кадмію призводять до формування нестехіометричної сполуки Cu x S. В залежності від умов проведення реакції величина х може змінюватися від 1 до 2. Відомо, що при кімнатній температурі існують кілька стабільних фаз сульфіду міді: халькоцит -Cu 2 S; дьюрліт -Cu 1.96 S; дігенит -Cu 1.8 S; аніліт -Cu 1.75 S; ковеліт -CuS.…”

Section: дифрактометричний аналізunclassified

INVESTIGATION OF COMPONENT COMPOSITION OF CdS-Cux S SENSORIC LAYERS

Борщак¹,

Сминтина²,

Бритавський³

2014

SEMST

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Copper diffusion and photovoltaic mechanisms at Cu-CdS contact

Cited by 12 publications

References 12 publications

The investigation of stability of n-CdS/p-Cu₂S solar cells prepared by cold substrate method

The investigation of stability of n-CdS/p-Cu₂S solar cells prepared by cold substrate method

Diffusion in CdS of Cd and S vacancies and Cu, Cd, Cl, S and Te interstitials studied with first-principles computations

INVESTIGATION OF COMPONENT COMPOSITION OF CdS-Cux S SENSORIC LAYERS

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Copper diffusion and photovoltaic mechanisms at Cu-CdS contact

Cited by 12 publications

References 12 publications

The investigation of stability of n-CdS/p-Cu2S solar cells prepared by cold substrate method

The investigation of stability of n-CdS/p-Cu2S solar cells prepared by cold substrate method

Diffusion in CdS of Cd and S vacancies and Cu, Cd, Cl, S and Te interstitials studied with first-principles computations

INVESTIGATION OF COMPONENT COMPOSITION OF CdS-Cux S SENSORIC LAYERS

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The investigation of stability of n-CdS/p-Cu₂S solar cells prepared by cold substrate method

The investigation of stability of n-CdS/p-Cu₂S solar cells prepared by cold substrate method