Copper doping of Sb2S3: fabrication, properties, and photovoltaic application

Lei, Hongwei; Lin, Tinghao; Wang, Xinran; Dai, Peng; Guo, Yaxiong; Gao, Yijun; Hou, Dejia; Chen, Jianjun; Tan, Zuojun

doi:10.1007/s10854-019-02481-9

Cited by 18 publications

(22 citation statements)

References 33 publications

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“…The same group then [93] reported that the product of RF magnetron sputtering is amorphous and further transforms to the polycrystalline phase at post-annealing process. Lei et al [62] reported the successful copper (Cu) doped Sb 2 S 3 via RF sputtering. Luo et al [39] also deposited Sb 2 S 3 by RF magnetron sputtering, and used as an absorber in substrate structure-based Sb 2 S 3 solar cell.…”

Section: Sb 2 S 3 Deposition Strategiesmentioning

confidence: 99%

“…XRD and transmittance spectra confirmed that modified films did not make any lattice distortions, but resulted in enhanced electrical conductivity and device performance. Lei et al [62] doped Cu in Sb 2 S 3 and the doping resulted in PCE improvement compared to Pn-Sb 2 S 3 based device PCE of 0.86% to 1.13% due to optimum Cu-doping, as higher the conduction band maximum (CBM) and deeper valance band maximum (VBM) of Cu-Sb 2 S 3 benefited the charge transport. In addition, a remarkable carrier concentration increase was also recorded.…”

Section: Doping Effects On Sb 2 S 3 Solar Cell Performancementioning

confidence: 99%

“…Apart from organic HTLs, inorganic HTLs, and HTL-free based Sb 2 S 3 devices, there are reports about stabilities of doping induced Sb 2 S 3 stability. Lei et al [62] investigated the PCEs of pristine Sb 2 S 3 and Cu-doped Sb 2 S 3 based devices stability with spiro-OMeTAD as HTL. Interestingly, both devices exhibited remarkable stabilities and retained more than 95% of initial PCE values even with organic spiro-OMeTAD as HTL in an ambient atmosphere with humidity of ≈40%.…”

Section: Stabilitymentioning

confidence: 99%

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Wide Bandgap Sb₂S₃ Solar Cells

Shah

Chen

Khalaf

et al. 2021

Adv Funct Materials

123

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The wide bandgap Sb 2 S 3 is considered to be one of the most promising absorber layers in single-junction solar cells and a suitable top-cell candidate for multi-junction (tandem) solar cells. However, compared to mature thinfilm technologies, Sb 2 S 3 based thin-film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single-junction structure. Furthermore, to break single junction solar cell based Shockley-Queisser (S-Q) limits, tandem devices with wide bandgap top-cells and low bandgap bottom-cells hold a high potential for efficient light conversion. Though matured and desirable bottom-cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top-cell candidates are still lacking. Hence, a literature review based on Sb 2 S 3 solar cells is urgently warranted. In this review, the progress and present status of Sb 2 S 3 solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low-performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb 2 S 3 in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.

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Section: Sb 2 S 3 Deposition Strategiesmentioning

confidence: 99%

Section: Doping Effects On Sb 2 S 3 Solar Cell Performancementioning

confidence: 99%

Section: Stabilitymentioning

confidence: 99%

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Wide Bandgap Sb₂S₃ Solar Cells

Shah

Chen

Khalaf

et al. 2021

Adv Funct Materials

123

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“…There are four important doping positions, namely at the surface, at the grain boundary, in the lattice by replacing host atoms, and interstitial. The doping effects in Sb 2 S 3 absorbers for thin films [48,50,91,96,97] and solar cells [25,49,71,[98][99][100][101][102][103] are discussed below.…”

Section: Doping Strategiesmentioning

confidence: 99%

Section: Ti Zn and Bi Dopingmentioning

confidence: 99%

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Myagmarsereejid

Ingram

Batmunkh

et al. 2021

Small

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Sb2S3 is an attractive solar absorber material that has garnered tremendous interest because of its fascinating properties for solar cells including suitable band gap, high absorption coefficient, earth abundance, and excellent stability. Over the past several years, intensive efforts have been made to enhance the photovoltaic efficiencies of Sb2S3 solar cells using many promising approaches including interfacial engineering, surface passivation, additive engineering, and band‐gap engineering of the charge transport layers and active light absorbing Sb2S3 materials. Recently, doping strategies in Sb2S3 light absorbers have gained attention as they promise to play important roles in controlling band gap, regulating film morphology, and passivating grain boundaries, and thus resulting in enhanced carrier transport, which is one of the most challenging issues in this cutting‐edge research field. In this review, after a brief introduction to Sb2S3, an overview of Sb2S3 solar cells and their fundamental properties are provided. Recent advances in doping strategies in Sb2S3 thin films and solar cells are then discussed to provide in‐depth understanding of the effects of various dopants on the photovoltaic properties of Sb2S3 materials. In conclusion, the personal perspectives and outlook to the future development of Sb2S3 solar cells are provided.

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Realizing Rapid Kinetics of Na Ions in Tin‐Antimony Bimetallic Sulfide Anode with Engineered Porous Structure

Lamsal

et al. 2023

Small Structures

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Metallic sulfide anodes show great promise for sodium‐ion batteries due to their high theoretic capacities. However, their practical application is greatly hampered by poor electrochemical performance because of the large volume expansion of the sulfides and the sluggish kinetics of the Na+ ions. Herein, a porous bimetallic sulfide of the SnS/Sb2S3 heterostructure is constructed that is encapsulated in the sulfur and nitrogen codoped carbon matrix (SnS/Sb2S3@SNC) by a facile and scalable method. The porous structure can provide void space to alleviate the volume expansion upon cycling, guaranteeing excellent structural stability. The unique heterostructure and the S, N codoped carbon matrix together facilitate fast‐charge transport to improve reaction kinetics. Benefitting from these merits, the SnS/Sb2S3@SNC electrode exhibits high capacities of 425 mA h g−1 at 200 mA g−1 after 100 cycles, and 302 mA h g−1 at 500 mA g−1 after 400 cycles. Moreover, the SnS/Sb2S3@SNC anode shows an outstanding rate performance with a capacity of over 200 mA h g−1 at a high current density of 5000 mA g−1. This study provides a new strategy and insight into the design of electrode materials with the potential for the practical realization and applications of next‐generation batteries.

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Copper doping of Sb2S3: fabrication, properties, and photovoltaic application

Cited by 18 publications

References 33 publications

Wide Bandgap Sb₂S₃ Solar Cells

Wide Bandgap Sb₂S₃ Solar Cells

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Realizing Rapid Kinetics of Na Ions in Tin‐Antimony Bimetallic Sulfide Anode with Engineered Porous Structure

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Copper doping of Sb2S3: fabrication, properties, and photovoltaic application

Cited by 18 publications

References 33 publications

Wide Bandgap Sb2S3 Solar Cells

Wide Bandgap Sb2S3 Solar Cells

Doping Strategies in Sb2S3 Thin Films for Solar Cells

Realizing Rapid Kinetics of Na Ions in Tin‐Antimony Bimetallic Sulfide Anode with Engineered Porous Structure

Contact Info

Product

Resources

About

Wide Bandgap Sb₂S₃ Solar Cells

Wide Bandgap Sb₂S₃ Solar Cells

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells