Copper sulfides obtained by spray pyrolysis — Possible absorbers in solid-state solar cells

Isac, Luminita; Duţă, Anca; Kriza, Angela; Manolache, S.A.; Nanu, M.

doi:10.1016/j.tsf.2006.12.073

Cited by 104 publications

(62 citation statements)

References 14 publications

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“…For the deposition of thin CuS layers, various physical and chemical methods, including chemical bath deposition (CBD) [2,15,[24][25][26], vacuum evaporation [27], successive ionic layer adsorption and reaction (SILAR) [18,28] and spray pyrolysis deposition [6,11,16,[29][30][31][32] have been used. These different methods mainly affect the morphology of copper sulfide samples.…”

Section: Introductionmentioning

confidence: 99%

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Nazari

Taloobaghi

Eshghi

2017

Materials Science-Poland

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In this study, physical properties of copper sulfide thin films deposited on glass substrates by spray pyrolysis method at different temperatures (260°C, 285°C and 310°C) were investigated. The influence of annealing time on the physical properties of grown layers was also studied. According to FESEM images, the sizes of the compact copper sulfide grains were varied from about 100 nm to 60 nm. Hall effect and resistivity measurements confirmed that all samples had p-type conductivity. The XRD patterns showed that, together with the dominant digenite phase (Cu 1.8 S) in all samples, the copper-rich phases also appeared as a result of increasing substrate temperature. The optical UV-Vis spectra analysis showed that due to increasing the substrate temperature, the band gap of the layers was reduced from about 2.4 eV to 2.0 eV. We found that as a result of annealing at 400°C for 1.5 h in Ar atmosphere, the sample which was initially grown at 310°C with the highest copper content, totally transformed into the polycrystalline monoclinic chalcocite phase (Cu 2 S) with 3D nanoporous architecture.

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Section: Introductionmentioning

confidence: 99%

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Nazari

Taloobaghi

Eshghi

2017

Materials Science-Poland

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“…HO-TH-04 [15,23] from aqueous solutions of SnCl 4 .5H 2 O and InCl 3 (50 % w/w), using compressed air as carrier gas. Small pieces (dim: 2 9 2 cm 2 ) of ultrasonically cleaned polyimide films were used as a substrate on which ITO films were grown.…”

Section: Preparation Of Polyimide Film Substratementioning

confidence: 99%

Study of conducting ITO thin film deposition on flexible polyimide substrate using spray pyrolysis

et al. 2015

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Nanostructured indium tin oxide (ITO) thin films have been grown by chemical spray pyrolysis method on flexible polyimide (PI) polymeric substrates at various temperatures (400, 450 and 500°C) using solutions of indium and tin chlorides as precursors. The composition, microstructure, surface morphology, thermal, electrical, and optical characteristics have been analysed by FT-IR, UV-Vis, X-ray diffraction, SEM, EDAX, atomic force microscopy, electrical measurements, TGA, etc. X-ray diffraction measurements employing Cu-Ka radiation showed that the ITO films were polycrystalline with a cubic bixbyite structure. An increment in average grain size, electrical conductivity and optical transmittance was observed at higher substrate temperature. ITO-coated films maintained the mechanical properties and stability of the pristine PI films. The adhesion between surface ITO layers and PI matrix was found acceptable. Graphical Abstract

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“…The CdS has been prepared by spray pyrolysis [5,6], vacuum deposition [7], molecular beam epitaxy, solution growth [8], chemical bath deposition [9] and metal organic chemical vapour deposition (MOCVD) [10]. MOCVD also known as Organo Metallic Vapour Pressure Epitaxy (OMVPE) is a technique that is attractive because it makes use of a single solid precursor prepared cheaply from appropriate reagents and can also be modified for quality and better reproducibility of the film with desired properties.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

Ayinde¹

2017

IJMSA

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Abstract:A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm 3 /min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1. 17 × 10 Ω/□ and 10.40 Ω were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.

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Copper sulfides obtained by spray pyrolysis — Possible absorbers in solid-state solar cells

Cited by 104 publications

References 14 publications

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Study of conducting ITO thin film deposition on flexible polyimide substrate using spray pyrolysis

Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

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