2020
DOI: 10.1088/1361-6528/ab99f0
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Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication

Abstract: Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the pa… Show more

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Cited by 9 publications
(9 citation statements)
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“…The fabrication of the Si 3 N 4 membranes is reported elsewhere. 45 For ex situ heating experiments, several contacted NWs can be propagated at the same condition, giving more statistics on the reaction behavior. To conduct the thermal exchange reaction, specimens were annealed in a temperature range of 400–450 °C in a N 2 atmosphere and rapidly or slowly cooled to room temperature.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The fabrication of the Si 3 N 4 membranes is reported elsewhere. 45 For ex situ heating experiments, several contacted NWs can be propagated at the same condition, giving more statistics on the reaction behavior. To conduct the thermal exchange reaction, specimens were annealed in a temperature range of 400–450 °C in a N 2 atmosphere and rapidly or slowly cooled to room temperature.…”
Section: Methodsmentioning
confidence: 99%
“…In this study, Si 0.67 Ge 0.33 NWs were also contacted on homemade 200 nm Si 3 N 4 membranes for ex-situ heating experiments using rapid thermal annealing (RTA). The fabrication of the Si 3 N 4 membranes is reported elsewhere . For ex situ heating experiments, several contacted NWs can be propagated at the same condition, giving more statistics on the reaction behavior.…”
Section: Methodsmentioning
confidence: 99%
“…To investigate the structural properties as well as the Al–Ge interface quality, devices identical in construction have been fabricated on 40 nm thick Si 3 N 4 transmission electron microscopy (TEM) membranes. [ 33 ] Figure 1b shows that the exchange reaction forms an Al–Ge–Al NW heterostructure while maintaining a uniform diameter and abrupt interface. A zoom on the Al–Ge interface (Figure 1c) reveals that the interface is nearly atomically sharp with the Ge lattice oriented along the [110] direction, transitioning to crystalline Al (c‐Al) in a single atomic layer.…”
Section: Resultsmentioning
confidence: 99%
“…HAADF STEM was performed on Al‐Ge‐Al NW heterostructures fabricated on 40 nm thick Si 3 N 4 membranes [ 44,45 ] using a probe‐corrected FEI Titan Themis, working at 200 kV. The Al‐Ge interface in the shown images lies along the [112] direction of observation of the Ge crystal.…”
Section: Methodsmentioning
confidence: 99%