Correlation-Induced Insulating Topological Phases at Charge Neutrality in Twisted Bilayer Graphene

Liao, Yuan Da; Kang, Jian; Breiø, Clara N.; Xu, Xiao Yan; Wu, Han‐Qing; Andersen, Brian M.; Fernandes, Rafael M.; Meng, Zi Yang

doi:10.1103/physrevx.11.011014

Cited by 103 publications

(50 citation statements)

References 72 publications

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“…The difference is that the TRS breaking NNN hopping term is introduced explicitly in the Haldane model, while here it emerges spontaneously due to electron interactions, a typical feature of TMIs. We also note that in a recent quantum Monte Carlo simulation applied at charge neutrality 53 (i.e. even integer filling), a quantum valley Hall state is found at intermediate coupling for a specific choice of kinetic energy terms.…”

Section: Resultsmentioning

confidence: 64%

“…1 ) is where U 0 constitutes the overall energy scale in the problem (≈40 meV in TBG and set to unity henceforth). represents the cluster charge term 22 , 25 , 53 , 54 , 59 , 60 (c.f. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…( 1 ), is sufficient to recover the insulating and the topologically nontrivial phases. In addition, the main features of the single-particle excitation dispersion of the strong coupling correlated ground states at the charge neutrality point 53 from the model in Eq. ( 1 ) match those computed exactly in the extended basis 61 , 67 .…”

Section: Discussionmentioning

confidence: 99%

“…Here we show that the TMI is realized in a simple lattice model introduced by two of the authors as a local description of the correlations within the TBG narrow bands 26,53,54 . The key new ingredients are the off-site terms appearing alongside the usual on-site terms in the projected density operator.…”

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confidence: 86%

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Realization of topological Mott insulator in a twisted bilayer graphene lattice model

et al. 2021

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Magic-angle twisted bilayer graphene has recently become a thriving material platform realizing correlated electron phenomena taking place within its topological flat bands. Several numerical and analytical methods have been applied to understand the correlated phases therein, revealing some similarity with the quantum Hall physics. In this work, we provide a Mott-Hubbard perspective for the TBG system. Employing the large-scale density matrix renormalization group on the lattice model containing the projected Coulomb interactions only, we identify a first-order quantum phase transition between the insulating stripe phase and the quantum anomalous Hall state with the Chern number of ±1. Our results not only shed light on the mechanism of the quantum anomalous Hall state discovered at three-quarters filling, but also provide an example of the topological Mott insulator, i.e., the quantum anomalous Hall state in the strong coupling limit.

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Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 86%

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Realization of topological Mott insulator in a twisted bilayer graphene lattice model

et al. 2021

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“…In the last decade, most efforts of nanotechnology researchers have been devoted to the study and characterization of electronic properties of graphene [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Indeed, graphene is a two-dimensional honeycomb structure with high electron mobility and stable lattice which has different classifications [ 8 , 9 , 10 , 11 ], such as graphene nanoscroll, twisted graphene, graphene nanoribbon, and few-layer graphene [ 12 , 13 , 14 , 15 , 16 , 17 ]. Among these different types of graphene, twisted graphene is a new class and interesting [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Monolayer Twisted Graphene-Based Schottky Transistor

Ahmadi

Koloor

et al. 2021

Materials

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The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

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Twisted Bilayer Graphene: A Journey Through Recent Advances and Future Perspectives

Rakkesh,

Rebecca,

Naveen

et al. 2023

Part & Part Syst Charact

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Twisted bilayer graphene (TBG) has emerged as a fascinating research frontier in condensed matter physics and materials science. This review article comprehensively overviews recent advances and future perspectives in studying TBG. The challenges associated with fabricating and characterizing TBG structures, including precise control of the twist angle and accurate determination of electronic properties, are discussed. Furthermore, the intriguing phenomena observed in TBG, such as superconductivity, insulating phases, and correlated electron states, shedding light on their underlying mechanisms, are explored. Scalability and device integration of TBG are explored, along with potential engineering strategies to tailor its properties for specific applications. By synthesizing and analyzing the latest scientific reports, a roadmap for further research is provided and the promising prospects for TBG are highlighted.

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Correlation-Induced Insulating Topological Phases at Charge Neutrality in Twisted Bilayer Graphene

Cited by 103 publications

References 72 publications

Realization of topological Mott insulator in a twisted bilayer graphene lattice model

Realization of topological Mott insulator in a twisted bilayer graphene lattice model

Monolayer Twisted Graphene-Based Schottky Transistor

Twisted Bilayer Graphene: A Journey Through Recent Advances and Future Perspectives

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