Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy

Paggel, J. J.; Theis, Wolfgang; Horn, Karsten; Jung, Ch.; Hellwig, Ch.; Petersen, H.

doi:10.1103/physrevb.50.18686

Cited by 57 publications

(29 citation statements)

References 24 publications

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“…4͑a͒ and 4͑b͒ since with higher photon energy the mean-free path of the electrons decreases and reaches its minimum at a photon energy around 135-140 eV. 20,21 It can be seen in Figs. 4͑a͒-4͑e͒ that the C 1 component increases in intensity with higher photon energy.…”

Section: Methodsmentioning

confidence: 89%

Surface electronic structure of Mn/Si(111)-3×3

2008

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The Mn/ Si͑111͒-ͱ 3 ϫ ͱ 3 surface has been studied in detail by low energy electron diffraction ͑LEED͒, angle-resolved photoelectron spectroscopy ͑ARPES͒, and core-level photoelectron spectroscopy ͑CLS͒. Annealing of the deposited manganese resulted in a well-ordered surface as seen by intense ͱ 3 ϫ ͱ 3 LEED spots. ARPES spectra recorded in the ⌫ -K -M direction of the ͱ 3 ϫ ͱ 3 surface Brillouin zone show five surface related features in the band gap while in the ⌫ -M -⌫ direction four surface features are observed. The highresolution Si 2p CLS data were recorded at photon energies between 108-140 eV both at normal and 60°e mission angle. The bulk component was identified from the bulk sensitive spectrum recorded at a photon energy of 108 eV. To achieve a consistent core-level fitting over the whole energy and angular range, five components were introduced in the line-shape analysis. The photoemission data from the ͱ 3 ϫ ͱ 3 surface have been discussed and compared with a recent theoretical model. The findings here support a layered Mn silicide film structure.

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Section: Methodsmentioning

confidence: 89%

Surface electronic structure of Mn/Si(111)-3×3

2008

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“…The determined binding energy shifts and intensities relative to B are 0.314 eV and 0.310 for the S b1 component, and Ϫ0.716 eV and 0.038 for the S b2 component. Considering the energy shifts of the surface components reported previously, [55][56][57] we assign the S b1 and S b2 components to the adatoms and the atoms bonded with them, and to the rest atoms. The intensity ratio, I(S b1 )/I(S b2 )ϭ8.21, is in good agreement with the ratio of surface atoms in the (7ϫ7) unit cell, i.e., (adatomsϩpedestal atoms)/(rest atoms)ϭ(12ϩ12 ϫ3)/6ϭ8.…”

Section: Si 2p Core Level Pesmentioning

confidence: 99%

Temperature dependence of the electronic structure ofC60films adsorbed onSi(001)−
Sakamoto
¹
,
Kondo
²
,
Ushimi
³

et al. 1999
Phys. Rev. B
51
8
29
1
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We report here the temperature-dependent measurements of the valence spectra, the C 1s and the Si 2p core level spectra of the one monolayer C 60 film adsorbed on Si͑001͒-(2ϫ1) and Si͑111͒-(7ϫ7) surfaces, using photoelectron spectroscopy. At 300 K, most C 60 molecules are physisorbed with the coexistence of minority chemisorbed species on both Si͑001͒-(2ϫ1) and Si͑111͒-(7ϫ7) surfaces. After annealing the samples at 670 K, C 60 molecules change the bonding nature to a chemisorption that has both covalent and ionic characters. The covalent bonding orbital is observed at a binding energy of 2.10 eV on both Si surfaces. The amount of charge transfer is estimated to be 0.19 electrons per C 60 molecule on the Si͑001͒ surface, and to be 0.21 electrons per molecule on the Si͑111͒ surface. We consider the origin of the change in bonding nature to the different distance between two dangling bonds that results from the rearrangement of the surface Si atoms. After annealing at 1070 K, C 60 molecules decompose and the SiC formation takes progress at the interface. On the Si͑001͒ surface, the molecular orbitals ͑MO's͒ disappear at 1120 K and the binding energies of peaks observed in the valence spectra indicate the formation of SiC islands at this temperature. On the Si͑111͒ surface, the disappearance of MO's and the formation of SiC islands are verified at 1170 K. The difference in formation temperature is attributed to the different surface structure. ͓S0163-1829͑99͒00328-8͔

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“…[4][5][6][7][8][9] In previous photoemission studies, the Fermi-level pinning position was found at 0.65 eV above the valence-band maximum ͑VBM͒ on an HF-etched Si͑111͒ sample annealed at 900-1000°C, while a value of 0.58 eV was reported on the 1100-1200°C annealed sample. 10,11 The Fermi-level position of the 7 ϫ 7 surface is believed to be stable since it is determined by the high density of adatom surface states.…”

Section: Introductionmentioning

confidence: 99%

High-temperature annealing and surface photovoltage shifts onSi(111)7×7

et al. 2008

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The relation between annealing temperature and surface photovoltage ͑SPV͒ shifts on the Si͑111͒7 ϫ 7 surface of lightly n-doped substrates has been studied by core-level and valence-band photoelectron spectroscopies at 100 K. The SPV shift was found to depend strongly on the annealing temperature and the photon flux. Between 900 and 1150°C the magnitude of the SPV shift shows a general decrease with annealing temperature. After a narrow plateau, the SPV shift becomes positive for annealings at 1250 and 1270°C. As a consequence, the adatom surface state of the 7 ϫ 7 surface appears above the Fermi level. The unexpected SPV shift can be explained by the formation of a p-type layer during high-temperature annealing of the Si sample. The role of boron and carbon contaminations has been discussed in this context in the literature. By correlating the SPV shifts with the C 1s and B 1s core-level signals, we conclude that carbon, but not boron, is involved in the formation of the p-type layer. Further, our results show that the annealing temperature plays a crucial role when binding energies are determined from photoemission spectra at low temperature. The effect is of particular importance in the study of surface band-gap openings related to phase transitions at low temperature.

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Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy

Cited by 57 publications

References 24 publications

Surface electronic structure of Mn/Si(111)-3×3

Surface electronic structure of Mn/Si(111)-3×3

Temperature dependence of the electronic structure ofC60films adsorbed onSi(001)−
Sakamoto
¹
,
Kondo
²
,
Ushimi
³

et al. 1999
Phys. Rev. B
51
8
29
1
View full text Add to dashboard Cite

High-temperature annealing and surface photovoltage shifts onSi(111)7×7

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Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy

Cited by 57 publications

References 24 publications

Surface electronic structure of Mn/Si(111)-3×3

Surface electronic structure of Mn/Si(111)-3×3

Temperature dependence of the electronic structure ofC60films adsorbed onSi(001)−Sakamoto1, Kondo2, Ushimi3 et al. 1999Phys. Rev. B518291View full textAdd to dashboardCite

High-temperature annealing and surface photovoltage shifts onSi(111)7×7

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Resources

About

Temperature dependence of the electronic structure ofC60films adsorbed onSi(001)−
Sakamoto
¹
,
Kondo
²
,
Ushimi
³

et al. 1999
Phys. Rev. B
51
8
29
1
View full text Add to dashboard Cite