Correlation of time-dependent nonlinear response with phosphorus concentration in Si ultrathin film

Yen, Ting‐Yu; Huang, Yu-Hsiang; Shih, Meng-Ting; Chen, Wei-Ting; Hung, Kuan-Ming; Lo, Kuang Yao

doi:10.1016/j.surfin.2022.102541

Cited by 4 publications

(1 citation statement)

References 22 publications

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“…Optical second harmonic generation (SHG) is a nonlinear optical phenomenon that serves as a sensitive probe for studying buried solids and interfacial properties [11]. The sensitivity of SHG to interfacial electrical properties, such as charge traps [12] and doping levels [13,14], makes it as a unique characterization technique. In the centrosymmetric materials, dipole contributions at the lowest order are typically prohibited, except the dipole contribution at the interface where inversion symmetry is disrupted due to material discontinuity as well as the interfacial electric field.…”

Section: Introductionmentioning

confidence: 99%

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Ye,

Zhang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO2/Si (n-type/p-type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.

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Section: Introductionmentioning

confidence: 99%

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Ye,

Zhang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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show abstract

Unveiling dopant concentration in boron doped Si ultrathin film: Enhanced analysis using time-dependent second harmonic generation

Yen,

Shih,

Song

et al. 2023

Surfaces and Interfaces

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Comprehensive study of interface state via the time-dependent second harmonic generation

Zhang,

Ye,

Zhao

et al. 2024

Journal of Applied Physics

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Electric field induced time-dependent second harmonic generation (TD-SHG) is an emerging sensitive and non-contact method for qualitatively/quantitatively probing semiconductor parameters. The TD-SHG signal is related to the evolution of the built-in electric field due to laser-induced electron generation and transportation. Here, we conducted a comprehensive study of fixed charge density (Qox) and interface state density (Dit) using the conventional conductance method to compare them with the SHG signal from TD-SHG. The extracted Qox is around 2.49 × 1010 cm−2 regardless of SiO2 thickness, corresponding to the constant SHG intensity at the minimum of TD-SHG. The extracted Dit linearly decreases with the SiO2 thickness, which is related to the linear change of extracted time constant from TD-SHG. Therefore, the TD-SHG, being a sensitive and non-contact method as well as simple and fast, can serve as an alternative approach to test the semiconductor parameters, which may facilitate semiconductor testing.

show abstract

Correlation of time-dependent nonlinear response with phosphorus concentration in Si ultrathin film

Cited by 4 publications

References 22 publications

The study of interface quality in HfO₂/Si films probed by second harmonic generation

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Unveiling dopant concentration in boron doped Si ultrathin film: Enhanced analysis using time-dependent second harmonic generation

Comprehensive study of interface state via the time-dependent second harmonic generation

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Correlation of time-dependent nonlinear response with phosphorus concentration in Si ultrathin film

Cited by 4 publications

References 22 publications

The study of interface quality in HfO2/Si films probed by second harmonic generation

The study of interface quality in HfO2/Si films probed by second harmonic generation

Unveiling dopant concentration in boron doped Si ultrathin film: Enhanced analysis using time-dependent second harmonic generation

Comprehensive study of interface state via the time-dependent second harmonic generation

Contact Info

Product

Resources

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The study of interface quality in HfO₂/Si films probed by second harmonic generation

The study of interface quality in HfO₂/Si films probed by second harmonic generation