Corrigendum to “An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration” [Solid-State Electron. 51 (2007) 179–185]

Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation

“…The nature of variation of g m versus V g characteristic curves is attributed to the gate field dependency of hole mobility in Ge-channel devices, which is also consistent with the reported experimental results for Si devices [2,31,33]. Most importantly the feature of our reported characteristics is in contradiction with the theoretical predictions for Si devices in which some constant value of carrier mobility was used in the analysis [21]. The transconductance of Ge devices varies with D it in a complex fashion as observed from Eq.…”

“…T and k are the temperature in degree Kelvin and Boltzmann constant, respectively. Following the method described in [21], w(x) can be solved as…”

“…Taur et al developed a physical model for the drain current of silicon channel DG MOSFETs by employing Poisson's equation and current continuity equation [20]. More recently the carrier based approach has been introduced to predict concisely the current voltage characteristics of Si channel DG MOSFETs over the entire region of operation including the transition regions [21][22][23][24]. This formulation is based on the solution of Poisson Boltzmann equations, utilizes physical parameters like carrier concentration and also takes into account the effect of volume inversion.…”