Coulomb blockade thermometry

Hirvi, K. P.; Kauppinen, Juha; Korotkov, Alexander N.; Paalanen, M. A.; Pekola, Jukka P.

doi:10.1007/bf02548151

Cited by 16 publications

(21 citation statements)

References 18 publications

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“…20 The Monte-Carlo simulation program is in general similar to other single-electron simulators described extensively in recent literature. [21][22][23][24][25] The duration of a specific charge state ⌬t is modeled by a stochastic Poisson process, ⌬t ϭϪlog(r)/⌫, where r ͓0:1͔ is a random number and ⌫ is the tunnel rate. This rate in turn follows from the difference of free energy between initial and final state of the system ⌬F which is calculated from the capacitance setup:…”

Section: Employed Methodsmentioning

confidence: 99%

Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays

Müller¹,

Katayama²,

Mizuta³

1998

Journal of Applied Physics

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The influence of both geometric and offset charge disorder of two-dimensional quantum dot arrays ͑also known as network tunnel junctions͒ on their Coulomb blockade voltage V b is studied using extensive Monte-Carlo simulations. A general increase of V b with increasing disorder is confirmed, but an exception to the rule is found for intermediate degrees of offset charge disorder. Detailed studies of the V b distribution reveal a stability of its minimal value against geometric disorder, whereas this figure is considerably increased for high offset charge disorder. Implications of our results for single electron device design are discussed.

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Section: Employed Methodsmentioning

confidence: 99%

Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays

Müller¹,

Katayama²,

Mizuta³

1998

Journal of Applied Physics

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“…Electronic transport in nonmagnetic SETs was already extensively studied in the past two decades [14,15,79,80,81,82,83,84,85,86,87,88,89]. Recently, the attention was also drawn to electron tunnelling in magnetic systems [25,26,73,74,90,91,92], which was stimulated by recent progress in nanotechnology.…”

Section: Ferromagnetic Single-electron Transistors Based On Metallic mentioning

confidence: 99%

Spin effects in single-electron tunnelling

Barnaś¹,

Weymann²

2008

J. Phys.: Condens. Matter

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Abstract. An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions -single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin transport through ferromagnetic mesoscopic junctions including two or more barriers. Such systems are also called ferromagnetic single-electron transistors. We start from the situation when the central part of a device has the form of a magnetic (or nonmagnetic) metallic nanoparticle. Transport characteristics reveal then single-electron charging effects, including the Coulomb staircase, Coulomb blockade, and Coulomb oscillations. Single-electron ferromagnetic transistors based on semiconductor quantum dots and large molecules (especially carbon nanotubes) are also considered. The main emphasis is placed on the spin effects due to spin-dependent tunnelling through the barriers, which gives rise to spin accumulation and tunnel magnetoresistance. Spin effects also occur in the current-voltage characteristics, (differential) conductance, shot noise, and others. Transport characteristics in the two limiting situations of weak and strong coupling are of particular interest. In the former case we distinguish between the sequential tunnelling and cotunnelling regimes. In the strong coupling regime we concentrate on the Kondo phenomenon, which in the case of transport through quantum dots or molecules leads to an enhanced conductance and to a pronounced zero-bias Kondo peak in the differential conductance.

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“…To find out the influence of the background charges we used the Monte Carlo-method mentioned earlier. 6 In these simulation runs we introduced on each island a random offsett charge qo, i drawn from a uniform distribution within the interval [ -e/2, +e/2] since the effect of qo, i is e periodic. The uniform distribution reflects that fact that no particular configuration of q0,~ is preferred in experiment.…”

Section: Nonidealities Of the Arraysmentioning

confidence: 99%