Abstract:The structure of the energy spectrum of amorphous semiconductors as determined by the formation of covalent bonds is analyzed. In contrast with other theoretical models all considerations are based on a realistic model of the atomic structure of a-Si and a-Ge. The mathematical method used throughout the paper is, within certain subspaces (cells) of the total Hilbert space, the partial diagonalization of the Hamiltonian represented in an "extended Hilbert space". Existing model Hamiltonians, e.g. the Weaire-Tho… Show more
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