Cover Image, Volume 27, Issue 3

Kimovec, Rok; Helmers, Henning; Bett, Andreas W.; Topič, Marko

doi:10.1002/pip.3120

Cited by 2 publications

(6 citation statements)

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“…Finally, it is important to mention that the active area of both architectures can be further increased if needed by arranging the single units onto a series/parallel-connected module. [15,64] As previously commented, although the efficiency of 3C-SiCbased experimental LPCs could be reduced due to unexpected manufacturing issues, the simulation results indicate that this material opens a new promising route to improve the efficiency of current and future LPCs.…”

Section: Comparative With State-of-the-art Lpcsmentioning

confidence: 77%

“…From our proposed architectures, the 3C-SiC hLPC shows a remarkable efficiency between 10 and 100 W cm À2 , which could be considered the typical operating range of LPCs. This hLPC, optimized at 10 W cm À2 , achieves a 80.0% efficiency, improving [15] Huang, [16] Helmers [21] (illumination area of 0.054 cm 2 ), Outes, [22] Reichmuth, [23] York, [24] and Zhao. [25] the current record of Helmers et al [21] by 11.1%, and increases to 81.1% at 100 W cm À2 , exceeding by 9.7% the efficiency reported by the Outes et al [22] simulated vLPC.…”

Section: Comparative With State-of-the-art Lpcsmentioning

confidence: 96%

“…Possible limitations to this technology may arise from the manufacturing side, related to the illumination area. The device area of the state-of-the-art fabricated LPCs is 0.9 mm 2 for Reichmuth et al, [23] around 3 mm 2 for Huang et al [16] and Kimovec et al, [15] 5.4 mm 2 for Helmers et al, [21] and 11.3 mm 2 for Zhao et al [25] In the hLPC architecture, the illumination area is defined by the width and depth of the device. As previously mentioned, we chose in this work a 1 μm depth for both architectures in order to save computational costs, and a 10 μm width in the hLPC single unit for the same reason.…”

Section: Comparative With State-of-the-art Lpcsmentioning

confidence: 99%

“…[12] Multiple studies have achieved efficiencies over 50% using GaAs-based LPCs. [13][14][15][16][17][18][19][20][21][22][23][24][25] In fact, the current experimental record set by Helmers et al [21] has an efficiency of 68.9% under an input power density of 11.4 W cm À2 with a single GaAs cell. However, the efficiency of this device suffers from degradation with increasing input power density due to ohmic losses.…”

Section: Introductionmentioning

confidence: 99%

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Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80%

et al. 2022

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High power laser transmission technology is based on energy transfer through a monochromatic laser onto a photovoltaic receiver avoiding the limitations of conventional wiring. Current technology, headed by GaAs‐based devices, faces two limitations: the intrinsic entropic losses and the degradation at high input power densities due to ohmic losses. Two novel laser power converters focused on overcoming these limitations are proposed. 3C‐SiC is used as base material because of its high bandgap (2.36 eV) and its excellent crystallographic properties in order to reduce the entropic losses. Also, the current decreases due to the inherent flux reduction of high energy photons. To minimize ohmic losses, a recently proposed vertical architecture is explored, which can significantly reduce series resistance around two orders of magnitude (≈10−5 Ω cm2). Furthermore, 3C‐SiC is also implemented in a conventional horizontal architecture to show the advantage of increasing the energy gap to reduce the ohmic losses. The two laser power converters obtain efficiencies above the state‐of‐the‐art (87.4% at 3000 W cm−2 for the vertical architecture and 81.1% at 100 W cm−2 for the horizontal architecture) Taking this into account, the new devices open a new route for ultrahigh efficiency remote powered systems.

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Section: Comparative With State-of-the-art Lpcsmentioning

confidence: 77%

Section: Comparative With State-of-the-art Lpcsmentioning

confidence: 96%

Section: Comparative With State-of-the-art Lpcsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80%

et al. 2022

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“…[28] III-V based photovoltaic cells can circumvent the aforementioned deficiencies and have shown higher efficiencies and power density. [29][30][31][32][33][34][35][36][37][38] Cu(In, Ga)Se 2 (CIGS) solar cells have also been studied for solar concentrators. [39] We show that directly grown III-V micro-PV on sili con-on-insulator (SOI) substrate is a superior option for high power density and simple system integration.…”

mentioning

confidence: 99%

Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

Han

Spratt

et al. 2020

Advanced Materials

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Internet-of-Things (IoT) devices. Since the storage density of battery technologies has not followed Moore's law scaling trends, IoT systems that rely entirely on power conversion from outside sources such as thermal, vibrational, light, or radio waves are needed. [8] High-performance edge computers, incorporating complex IoT functions such as multiple sensors, encryption/decryption, data storage to nonvolatile memory (NVM), and computing intensive algorithms, [9] draw several hundreds of microwatts of power using the latest IC technology nodes. [10] Edge computing systems with higher memory data rates would be needed for artificial intelligence (AI) applications. [11] Several hundred of milliwatts of power may be required to improve performance for neuromorphic computing. [12] Power converters that can provide highest power in the smallest possible footprint and can be integrated with multiple chips would enable greater functionality. As radio frequency (RF) power converters suffer from low efficiency for chip size <1 mm due to reduced antenna size (l ≪ λ), light energy as a power source can provide much higher efficiency and higher power density in a much smaller footprint than RF devices. In addition to generating high power density, these photovoltaic (PV) devices can provide a stable and sufficient output voltage for on-chip circuitry (>3 V) to drive the nonvolatile memory, charge an on-chip battery, and other devices, without using the less efficient charge pump circuit to ramp up the voltage. There is a great interest in using micro-PVs to power and also communicate with IoT chips. [6,13-16] However, there are two main challenges with small edge computers using photovoltaic energy harvesting and power conversion. 1) Integration: no manufacturable process has been demonstrated for integrating micro-PV and other chips into one system, and 2) power density: existing micro-PVs are unable to meet the above power density and efficiency requirements. We developed solutions to both of these problems in this work. In prior works, the integration process was done using nonmanufacturable processes, including chip stacking and wire bonding between chips. [7,17-22] A high-throughput

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Cover Image, Volume 27, Issue 3

Abstract: The cover image is based on the Research Article Comprehensive Electrical Loss Analysis of Monolithic Interconnected Multi‐Segment Laser Power Converters by Rok Kimovec et al., https://doi.org/10.1002/pip.3075.

Cited by 2 publications

References 0 publications

Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80%

Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80%

Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

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