Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

GaN nanostructures are promising for a broad range of applications due to their 3D structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal facets, i.e., whether they are a-, m-plane, or of mixed orientation, impacts the stability and performance of GaN nanostructure-based devices. In this context, it is of great interest to control the formation of well-defined side facets. Here, we show that we can control the crystal facet formation at the nanowire sidewalls by tuning the III–V ratio during selective area growth by molecular beam epitaxy. Especially, the N flux serves as a tool for controlling the growth kinetics. In addition, we demonstrate the growth of GaN nanofins with either a- or m-plane side facets. Based on our observations, we present the underlying nanostructure growth mechanisms. Low temperature photoluminescence measurements show a correlation of the formation of structural defects like stacking faults with the growth kinetics. This article demonstrates the controlled selective epitaxy of GaN nanostructures with defined crystal side facets on large-scale available AlN substrates.

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Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy

Pantle

Karlinger

Wörle

et al. 2022

Journal of Applied Physics

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X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy

et al. 2023

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GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al2O3 are studied by X-ray diffraction (XRD) and grazing-incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection mode and at grazing incidence, reveals Ti, TiN, Ti3O, Ti3Al and Ga2O3 crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al2O3 and GaN. These topotaxial crystallites in the Ti film, formed as a result of interfacial reactions and N exposure, possess little misorientation with respect to Al2O3. As a result, GaN NWs grow on the top TiN layer, possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modelled by the Monte Carlo method, taking into account the orientational distributions of NWs, the variety of their cross-sectional shapes and sizes, and the roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of the {1100} and {1120} side facets are determined.

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Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

Abstract: We study the cross-sectional shapes of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height...

Cited by 2 publications

References 55 publications

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy

X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy

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Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

Abstract: We study the cross-sectional shapes of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height...

Cited by 2 publications

References 55 publications

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy

X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

Contact Info

Product

Resources

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X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy