Crossed-beam superluminescent diode

Vaissie, Laurent; Smolski, Oleg V.; Johnson, Eric

doi:10.1364/ol.30.001608

Cited by 14 publications

(13 citation statements)

References 9 publications

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“…The advantages of this method are that it can generate low divergence beams, can be tested on a wafer before packaging to reduce catastrophic optical damage, and can integrate advanced beam shaping elements on the substrate of the device. [ 140 ]…”

Section: Electrically Pumped Ase Devicesmentioning

confidence: 99%

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Light‐Emitting Device Based on Amplified Spontaneous Emission

Feng

Sun

et al. 2023

Laser & Photonics Reviews

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In recent years, with the rapid development of military, optical communication, biological imaging, and other fields, practical engineering applications such as fiber‐optic gyroscope, wavelength division multiplexing, and optical coherence tomography have put forward higher requirements on light sources. Amplified spontaneous emission (ASE) light source has become an excellent candidate due to its advantages such as suitable bandwidth, low coherence, and high power. Although the ASE light source is developed to a certain extent, there is still great room for improvement in the choice of gain medium and device structure. In order to accelerate the development and practical engineering application of ASE optoelectronic devices, it is of great significance to grasp the basic characteristics of the gain materials and the design of the device structure. In this review, the principle of the ASE effect and its difference with the generation of lasing are analyzed. Then, the optical gain properties of various gain materials, together with different structural types of electrically pumped ASE devices and their practical engineering applications, are summarized. Finally, the new ASE light‐emitting devices integrated with high‐gain materials and low‐cost structures are prospected to provide more ideas for their development.

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Section: Electrically Pumped Ase Devicesmentioning

confidence: 99%

Section: Electrically Pumped Ase Devicesmentioning

confidence: 99%

Light‐Emitting Device Based on Amplified Spontaneous Emission

Feng

Sun

et al. 2023

Laser & Photonics Reviews

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“…The PA was a tapered device with two integrated grating couplers providing a surface-emitted output and exhibited extremely low effective residual reflectivity [5]. For the MO, we used a laser diode with single wavelength emission provided by an integrated dual grating reflector (DGR).…”

Section: Mopa Assembly Designmentioning

confidence: 99%

Compact High Peak Power MOPA Assembly based on Grating Coupled Laser Diodes

Smolski

O'Daniel

Johnson

2006

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest.

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“…While horizontal‐cavity surface emitting lasers (HCSELs) using gratings or integrated deflectors have been extensively studied in the recent years, surprisingly little has been reported on SLEDs. To our knowledge there is only one experimental reference of a surface‐emitting SLED, albeit using a grating for out‐coupling . Most of the HCSEL‐concepts employ an ion beam etching (IBE) process which allows a very precise but also expensive and elaborate fabrication of integrated structures which is unsuitable for mass production .…”

Section: Introductionmentioning

confidence: 99%

Surface‐Emitting Micro‐Mirror Superluminescent Diodes: Investigation of Tilt Accuracy Via Far‐Field Analysis

Jentzsch

Gomez‐Iglesias

Tonkikh

et al. 2019

Physica Status Solidi (b)

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Far‐field characteristics of novel surface‐emitting micro‐mirror superluminescent diodes are investigated. The mirrors are fabricated by using thin film technology and an inductively coupled plasma etching process on wafer scale, suitable for mass production. Combining measurements and modeling results, the mirror tilt is estimated and the feasibility of good‐quality ≈45° mirrors is demonstrated. This approach offers an accuracy better than optical inspection with, e.g., scanning electron microscopy. In addition, our experiments revealed spurious ripples in the far‐field profiles with increasing tilt deviations, which finite‐difference time‐domain simulations identified as interference with back reflections. These results highlight the importance of tailored waveguides, high quality coatings, and precise mirror tilt to achieve maximal performance with surface‐emitting in‐plane semiconductor devices.

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Crossed-beam superluminescent diode

Abstract: We investigate a novel surface-emitting superluminescent diode configuration that uses two detuned grating outcouplers to suppress lasing. This device exhibits a shaped beam with a peak power of 1.5 W quasi-continuous wave with an 11 nm bandwidth centered on 970 nm.

Cited by 14 publications

References 9 publications

Light‐Emitting Device Based on Amplified Spontaneous Emission

Light‐Emitting Device Based on Amplified Spontaneous Emission

Compact High Peak Power MOPA Assembly based on Grating Coupled Laser Diodes

Surface‐Emitting Micro‐Mirror Superluminescent Diodes: Investigation of Tilt Accuracy Via Far‐Field Analysis

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