Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects

Bagheri, Amin; Ranjbar, Mahboubeh; Haji-Nasiri, Saeed; Mirzakuchaki, Sattar

doi:10.1016/j.microrel.2015.05.004

Cited by 15 publications

(5 citation statements)

References 32 publications

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“…Besides the transfer gain, the bandwidth is also considered as the significant parameter to describe the interconnect performance in the frequency domain. Bandwidth represents the capability of data transmission, thus a larger bandwidth can effectively reduce the total time to transmit a certain amount of data from the input port to output port for the interconnect system [2], [31]. Hence, it is crucial to seek a new promising technology to expand the bandwidth of the MLGNR interconnect system.…”

Section: B Two-line Coupled Mlgnr Interconnect Modelmentioning

confidence: 99%

“…Bandwidth denotes the capability of data transmitting for a system, which plays a vital role in an on-chip interconnect system [29], [30]. For an on-chip interconnect system, a larger bandwidth can remarkable reduce the total time to convey a certain number of data [2], [31]. However, so far the study regarding the 3-dB bandwidth of the SC-MLGNR interconnects is still rare.…”

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confidence: 99%

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Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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Section: B Two-line Coupled Mlgnr Interconnect Modelmentioning

confidence: 99%

mentioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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“…The integrated circuits consist of several adjacent interconnects, which are responsible for the generation of parasitic elements like mutual inductance and capacitance. Because of these parasitic components, a crosstalk effect is generated that can be considered as an extra serious matter in large scale integration [77,78]. The crosstalk phenomenon makes serious problem for the reliable operation of an interconnect, showing different effects like overshoot/undershoot [77], delay [79], glitch [78], and so on.…”

Section: Crosstalk Effectmentioning

confidence: 99%

“…To calculate the worst-case time-delay due to the crosstalk effect, the distributed RLC lines are drawn in Figure 22b, considering the parasitic coupling capacitor (CCdx) and inductor (Mdx). Now, CC = εt/s and M = µs/t denote the per-unit length values of the equivalent capacitance and mutual inductance induced by the coupling effects, where t and s are the MLGNR thickness and the distance between two interconnects [77,80]. Delay ratio with respect to Cu wire (local interconnect = 11 nm, aspect ratio = 2.1), with (a) minimum driver size and (b) double the minimum driver size [8].…”

Section: Crosstalk Effectmentioning

confidence: 99%

Graphene Nanoribbon as Potential On-Chip Interconnect Material—A Review

Hazra

Basu

2018

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In recent years, on-chip interconnects have been considered as one of the most challenging areas in ultra-large scale integration. In ultra-small feature size, the interconnect delay becomes more pronounced than the gate delay. The continuous scaling of interconnects introduces significant parasitic effects. The resistivity of interconnects increases because of the grain boundary scattering and side wall scattering of electrons. An increased Joule heating and the low current carrying capability of interconnects in a nano-scale dimension make it unreliable for future technology. The devices resistivity and reliability have become more and more serious problems for choosing the best interconnect materials, like Cu, W, and others. Because of its remarkable electrical and its other properties, graphene becomes a reliable candidate for next-generation interconnects. Graphene is the lowest resistivity material with a high current density, large mean free path, and high electron mobility. For practical implementation, narrow width graphene sheet or graphene nanoribbon (GNR) is the most suitable interconnect material. However, the geometric structure changes the electrical property of GNR to a small extent compared to the ideal behavior of graphene film. In the current article, the structural and electrical properties of single and multilayer GNRs are discussed in detail. Also, the fabrication techniques are discussed so as to pattern the graphene nanoribbons for interconnect application and measurement. A circuit modeling of the resistive-inductive-capacitive distributed network for multilayer GNR interconnects is incorporated in the article, and the corresponding simulated results are compared with the measured data. The performance of GNR interconnects is discussed from the view of the resistivity, resistive-capacitive delay, energy delay product, crosstalk effect, stability analysis, and so on. The performance of GNR interconnects is well compared with the conventional interconnects, like Cu, and other futuristic potential materials, like carbon nanotube and doped GNRs, for different technology nodes of the International Technology Roadmap for Semiconductors (ITRS).

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“…As the feature size of very large-scale integrated (VLSI) circuits is scaled down to the nanometer order, various performance degradation and stability problems on the conventional Cu interconnects have emerged in recent years [1][2][3]. Graphene, as a promising candidate for replacing the common copper, has attracted the intensive interest of many researchers in terms of its excellent electrical, mechanical and thermal properties [4,5].…”

Section: Introductionmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects

Cited by 15 publications

References 32 publications

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Graphene Nanoribbon as Potential On-Chip Interconnect Material—A Review

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

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