Crystal Data, Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8 Single Crystals

Structural, optical and electrical properties of CuIn5S8 thin films grown by thermal evaporation method

“…The deduced value of the unit cell parameter for this crystal (a) is found to be 10.667Å. This value is in good agreement with those reported by several authors [12,19,20]. An examination of the results obtained shows that there are no forbidden reflections (h k 0) with h + k = 4n + 2 detected for this compound (check Table 1).…”

“…CuIn 5 S 8 is an n-type semiconductor with direct transition [5]. The band gap of CuIn 5 S 8 is near 1.5 eV [13,14] and the temperature dependence of the band gap showed 1.35 and 1.32 eV at 0 K and 300 K, respectively [4][5][6][7][8][9][10][11][12]. These values are very close to the theoretical values suggested for obtaining a maximum efficiency in solar cell applications [15,16].…”

“…The main peaks are located at 2Â values of 27.84 • , 33.67 • , 44.15 • and 48.36 • with the reflection planes of (3 1 1), (4 0 0), (5 1 1) and (4 4 0) respectively. These reflections in XRD pattern are also in good agreement with the reported values [12]. The Miller indices (h k l), the observed and calculated interplanar spacing (d) Table 1 X-ray powder diffraction data for CuIn5S8 crystals ( Cu = 1.5418Å).…”

“…The lattice constant is a = 10.6736Å [12]. CuIn 5 S 8 is an n-type semiconductor with direct transition [5].…”

Acoustic phonons scattering mobility and carrier effective mass in In6S7 crystals

“…This value is an indication of thermal lattice scattering domination in the crystals. Following our previous works on InS [9] and CuIn 5 S 8 [10] crystals, we attempt to explain the Hall mobility assuming the domination of acoustic phonons scattering in In 6 S 7 crystals.…”