Crystal Growth and Electrical Properties of β-CdP2 Single Crystals

Трухан, В. М.; Soshnikov, L. E.; Маренкин, С. Ф.; Haliakevich, T. V.

doi:10.1007/s10789-005-0233-7

Cited by 15 publications

(9 citation statements)

References 2 publications

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“…The method of the crystal growth described in Ref. [8]. The samples of ZnP 2 were oriented to (0 0 1) and (1 0 0) Single crystal Permittivity Reflectance Phonon Plasmon…”

Section: Methodsmentioning

confidence: 99%

Plasmon–phonon contribution in the permittivity of ZnP2 single crystals in FIR at low temperatures

Shportko

Pasechnik

Wuttig

et al. 2009

Vibrational Spectroscopy

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“…The method of the crystal growth described in Ref. [8]. The samples of ZnP 2 were oriented to (0 0 1) and (1 0 0) Single crystal Permittivity Reflectance Phonon Plasmon…”

Section: Methodsmentioning

confidence: 99%

Plasmon–phonon contribution in the permittivity of ZnP2 single crystals in FIR at low temperatures

Shportko

Pasechnik

Wuttig

et al. 2009

Vibrational Spectroscopy

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“…The synthesis temperature of cadmium phosphides obtained using the gaseous phase growth method is at least above 700 • C under ambient conditions [7,8,15]. In this study, the initiation Downloaded by [Northeastern University] at 02:43 27 November 2014 of the growth of the Cd 7 P 10 crystals occurred upon the melting of Cd.…”

Section: Resultsmentioning

confidence: 70%

“…Owing to the large excitonic radii of these materials, they are expected to exhibit pronounced size quantization effects and distinct anisotropic properties [1][2][3]. Because of their excellent photosensitivity and electroluminescence properties, semiconducting cadmium phosphides are also promising materials in device applications such as infrared detectors, lasers, solar cells, ultrasonic multipliers and Hall generators [3,[7][8][9][10][11][12]. Nanoscale semiconductors have even more novel electronic and optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

Wang

Peng

Guan

et al. 2012

High Pressure Research

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In this study, pure-phase Cd 7 P 10 crystals are prepared by the reaction of elements at high pressures in a largevolume cubic press. The synthetic Cd 7 P 10 samples are characterized by powder X-ray diffraction, scanning electron microscopy and diamond indentation method. The results show that orthorhombic Cd 7 P 10 grains with a size of over 70 μm could be obtained and that the high pressure well-sintered Cd 7 P 10 compacts have a Vickers hardness value of 8.9 GPa under a load of 49 N. The pressure-temperature formation region of Cd 7 P 10 is determined up to 5 GPa and 1500 • C, and the formative mechanism under high pressures is discussed. Our results exhibit a novel route for synthesizing bulk semiconductor polystalline Cd 7 P 10 compacts.

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“…Moving the ampul toward the crystallization zone, i.e., increasing the temperature gradient, at a rate of 0.6-0.8 mm/h that was approximately equal to the crystal growth rate, provided a constant vaporization-zone temperature during the whole growth process and maintained stable growth conditions. Thus, the optimum combination of the three factors, i.e., crystallization temperature, critical overcooling, and ampul movement rate, that allowed uninterrupted growth of tetragonal CdP 2 single crystals was found [10][11][12]. The grown CdP 2 crystals were monophasic according to x-ray structure analysis.…”

mentioning

confidence: 99%

Raman Spectra of Gyrotropic Cadmium Diphosphide Crystals

et al. 2015

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Samples of CdP 2 single crystals oriented relative to the crystallographic axes were prepared. Their optical quality was studied using conoscopy and atomic-force microscopy. Raman spectra of CdP 2 single crystals in polarized and unpolarized light in backscattering confi guration were obtained and analyzed.Introduction. Wide-bandgap gyrotropic cadmium diphosphide (CdP 2 ) crystals are extensively used to fabricate electronic and nonlinear-optics devices. Their operating principle is based on the utilization of nonlinear polarizability and solid-state gyrotropy. Instantaneous feedback to the radiation active fi eld, which is the functional basis of many electronic devices, is possible due to their practical lack of inertia in CdP 2 crystals [1,2]. The interest of researchers with respect to these crystals has persisted throughout the years [3][4][5][6][7]. It is well known that gyrotropic CdP 2 crystals consist of a large quantity of Cd and P atoms joined into chains. Most of them are joined into moderately ordered groupings (clusters) with slightly variable geometric parameters that depend on the synthesis technology and crystal-growth conditions. Therefore, they determine the crystal physical properties [8,9].The goal of the present work was to establish the processing parameters (temperature gradient in the crystal-growth zone, the rate of movement, and post-processing annealing) in order to grow homogeneous crystals of high optical quality and the effectiveness of using conoscopy, atomic-force microscopy, and spatially polarized Raman scattering (RS) in order to monitor the structural perfection of the crystals.Experimental. Previously synthesized polycrystalline CdP 2 that was obtained from the starting materials by a dualtemperature method was used to grow CdP 2 single crystals [10]. Ampuls with polycrystalline CdP 2 were evacuated to 10 -3 Pa, sealed, and placed into a vertical dual-temperature resistance furnace. Single crystals of CdP 2 grew from the gas phase in the conical part of the ampul, creating a small critical overcooling that provided a suffi cient transfer rate of the compound from the vaporization zone into the crystallization zone. It was found that the critical overcooling for forming CdP 2 nuclei was 3-8 K; the crystallization-zone temperature, 980-1010 K. Low supersaturations were created in large-diameter ampuls (18-20 mm) in order to control nucleus formation and limit the processing to reasonable times. This kept the growth rate rather high. Moving the ampul toward the crystallization zone, i.e., increasing the temperature gradient, at a rate of 0.6-0.8 mm/h that was approximately equal to the crystal growth rate, provided a constant vaporization-zone temperature during the whole growth process and maintained stable growth conditions. Thus, the optimum combination of the three factors, i.e., crystallization temperature, critical overcooling, and ampul movement rate, that allowed uninterrupted growth of tetragonal CdP 2 single crystals was found [10][11][12]. The grown CdP 2 crystals wer...

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Crystal Growth and Electrical Properties of β-CdP2 Single Crystals

Cited by 15 publications

References 2 publications

Plasmon–phonon contribution in the permittivity of ZnP2 single crystals in FIR at low temperatures

Plasmon–phonon contribution in the permittivity of ZnP2 single crystals in FIR at low temperatures

Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

Raman Spectra of Gyrotropic Cadmium Diphosphide Crystals

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Crystal Growth and Electrical Properties of β-CdP2 Single Crystals

Cited by 15 publications

References 2 publications

Plasmon–phonon contribution in the permittivity of ZnP2 single crystals in FIR at low temperatures

Plasmon–phonon contribution in the permittivity of ZnP2 single crystals in FIR at low temperatures

Cadmium phosphide, Cd7P10, prepared at high pressures

Raman Spectra of Gyrotropic Cadmium Diphosphide Crystals

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Cadmium phosphide, Cd₇P₁₀, prepared at high pressures