Crystal growth, electron structure and photo induced optical changes in novel AgxGaxGe1−xSe2 (x=0.333, 0.250, 0.200, 0.167) crystals

Parasyuk, O.V.; Fedorchuk, A.O.; Gorgut, G. P.; Khyzhun, O.Y.; Wojciechowski, A.; Kityk, I.V.

doi:10.1016/j.optmat.2012.07.002

Cited by 50 publications

(30 citation statements)

References 20 publications

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“…Five ternary compounds -TlInSe 2 , TlIn 5 system, which is consistent with the literature data. On the TlInSe 2 -GeSe 2 cross-section, the occurrence of two quaternary compounds TlInGeSe 4 and TlInGe 2 Se 6 has been confirmed.…”

supporting

confidence: 92%

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Phase equilibria in Tl2Se–In2Se3–GeSe2 system at 520 K

Tsisar¹,

Піскач²,

Babizhetskyy³

et al. 2018

Visnyk Lviv Univ. Ser. Chem.

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За результатами рентгенофазового аналізу побудовано ізотермічний переріз діаграми стану квазі-потрійної системи Tl 2 Se-In 2 Se 3 -GeSe 2 при 520 K. Підтверджено існування п'яти тернарних та двох тетрарних сполук. Нових сполук не знайдено. Система характеризується утворенням твердих розчинів незначної протяжності на основі вихідних бінарних сполук. Найбільшу область гомогенності має твердий розчин на основі тернарної сполуки TlInSe 2 (до 25 мол. % GeSе 2 ) вздовж квазібінарного перерізу TlInSе 2 -GeSе 2 . Протяжність решти твердих розчинів не перевищує 1 мол. % при 520 K.Ключові слова: квазіпотрійна система, ізотермічний переріз, фазові рівноваги, кристалічна структура.

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confidence: 92%

“…Для цих систем найбільш типовими є сполуки складів A [2] та AgGaGeS 4 (ПГ Fdd2) [4]. У системі AgGaSe 2 -GeSe 2 також утворюється сполука складу AgGaGe 3 Se 8 , яка кристалізується у просторовій групі Fdd2 [5].…”

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Phase equilibria in Tl2Se–In2Se3–GeSe2 system at 520 K

Tsisar¹,

Піскач²,

Babizhetskyy³

et al. 2018

Visnyk Lviv Univ. Ser. Chem.

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“…Сполука AgGaGe 3 Se 8 належить до монокристалів із значною концентрацією стехіометричних вакансій в підгратці срібла (V Ag ) та статистичним заповненням кристалографічної позиції 8a i 16b катіонами Ga та Ge у рамках просторової групи Fdd2 [11], що разом з іншими дефектами сприяє порушенню далекого порядку у розташуванні атомів при утворенні монокристалу і виникненню хвостів щільності енергетичних станів в забороненій зоні біля країв дозволених зон.…”

Section: методика та техніка експериментуunclassified

Optical Absorption and Piezoelectric Effect Investigation in Single Crystal of AgGaGe3Se7.6Te0.4 Solid Solution

Krymus¹,

Myronchuk²,

Parasyuk³

et al. 2016

PCSS

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In present work spectral distribution of absorption coefficient in the range of 100 – 300 K was investigated and band gap values evaluated. Parameters of Urbach rule were calculated and linearity of temperature dependence of Urbach energy was showed. Thermo induced piezoelectric effect in a range of 297 ‑ 357 K was investigated. Laser induced kinetics of piezomodule was investigated and absence of irreversible changes was showed. Influence of heating the crystal during laser illuminating on piezoelectric module was adjusted.

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“…This is best achieved by the systematic studies of phase diagrams based on these compounds. When such an approach was applied to the systems AgGaS 2 -GeS 2 and AgGaSe 2 -GeSe 2 [10][11][12][13][14][15] to improve non-linear optical parameters of the ternary compounds AgGaS 2 and AgGaSe 2 , it resulted in the synthesis of quaternary chalcogenides AgGaGeS 4 and Ag x Ga x Ge 1-x Se 2 . Like their ternary analog, they also crystallize in the acentric structure, but they have wider transparency windows, higher laser damage threshold (which is particularly important as they are intended for the operating range of the powerful CO-and CO 2 -pulsed lasers), and a simpler crystal growth technique.…”

Section: Introductionmentioning

confidence: 99%

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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Abstract:The studies of the laser operated third order nonlinear optical features of novel TlGaSn 2 Se 6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m 2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar + ions on the XPS spectra of the TlInSn 2 Se 6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn 2 Se 6 We have established that for the TlGaSn 2 Se 6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn 2 Se 6 crystal in advanced optoelectronic laser operated devices.

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Crystal growth, electron structure and photo induced optical changes in novel AgxGaxGe1−xSe2 (x=0.333, 0.250, 0.200, 0.167) crystals

Cited by 50 publications

References 20 publications

Phase equilibria in Tl2Se–In2Se3–GeSe2 system at 520 K

Phase equilibria in Tl2Se–In2Se3–GeSe2 system at 520 K

Optical Absorption and Piezoelectric Effect Investigation in Single Crystal of AgGaGe3Se7.6Te0.4 Solid Solution

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

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