Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

Tashmukhamedova, D. A.; Yusupjanova, M. B.; Allayarova, G. Kh.; Umirzakov, B. E.

doi:10.1134/s1063785020100144

Tech. Phys. Lett.

2020

DOI: 10.1134/s1063785020100144

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Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

D. A. Tashmukhamedova

M. B. Yusupjanova

G. Kh. Allayarova

et al.

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Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

Cited by 4 publications

References 17 publications

Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

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