Crystal structure and dielectric properties of layered perovskite-like solid solutions Bi3−xGdxTiNbO9 (x=0, 0.1, 0.2, 0.3) with high Curie temperature

Zubkov, S. V.

doi:10.1142/s2010135x20600024

Cited by 6 publications

(2 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The crystal structure of ASPs includes alternating layers of [Bi2O2] 2+ , separated by perovskitelike layers of [Am-1BmO3m+1] 2-, where the A-ions have large radii (Bi 3+ [8], Ca 2+ , Gd 3+ [9], Sr 2+ , Ba 2+ , Pb 2+ , Na + , K + , Y 3+ [10], Ln 3+ , Nd 3+ [11], Lu 3+ [12] (lanthanides) and demonstrate dodecahedral coordination. The B-positions in the oxygen octahedra are occupied by highly charged (≥ 3+) small-radius cations (Ti 4+ , Nb 5+ , Ta 5+ [13], W 6+ [14], Mo 6+ , Fe 3+ , Mn 4+ , Cr 3+ , Ga 3+ [15], etc.).…”

Section: Introductionmentioning

confidence: 99%

New Piezoceramic SrBi2Nb2-2xWxSnxO9: Crystal Structure, Microstructure and Dielectric Properties

Zubkov,

Parinov,

Nazarenko

2024

Preprint

View full text Add to dashboard Cite

By using the method of high-temperature solid-phase reaction, the new piezoceramic SrBi2Nb2-2xWxSnxO9 was obtained, in which partial substitution of niobium (Nb) atoms with Sn4+ and W6+ atoms in the compound SrBi2Nb2O9 took place in the octahedra of the perovskite layer (B-position). X-ray diffraction studies have shown that these compounds are single-phase SrBi2Nb2-2xWxSnxO9 (x = 0.1, 0.2) and two-phase SrBi2Nb2-2xWxSnxO9 (x = 0.3, 0.4), but they all had the structure of Aurivillius – Smolensky phases (ASPs) with similar parameters of orthorhombic elementary cells, corresponding to the spatial group A21am. The dependences on temperature of the relative permittivity ε/ε0 and the tangent of the loss angle tan d at different frequencies were measured.

show abstract

Section: Introductionmentioning

confidence: 99%

New Piezoceramic SrBi2Nb2-2xWxSnxO9: Crystal Structure, Microstructure and Dielectric Properties

Zubkov,

Parinov,

Nazarenko

2024

Preprint

View full text Add to dashboard Cite

show abstract

“…For example, S.V. Zubkov doped Gd elements in BTN, which can increase the Curie temperature to 950 • C [22]. Gd element was also found to provide high insulation and low loss [23].…”

Section: Introductionmentioning

confidence: 99%

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

Zhou

Wang

et al. 2021

Materials

View full text Add to dashboard Cite

In this work, a kind of Gd/Cr codoped Bi3TiNbO9 Aurivillius phase ceramic with the formula of Bi2.8Gd0.2TiNbO9 + 0.2 wt% Cr2O3 (abbreviated as BGTN−0.2Cr) was prepared by a conventional solid-state reaction route. Microstructures and electrical conduction behaviors of the ceramic were investigated. XRD and SEM detection found that the BGTN−0.2Cr ceramic was crystallized in a pure Bi3TiNbO9 phase and composed of plate-like grains. A uniform element distribution involving Bi, Gd, Ti, Nb, Cr, and O was identified in the ceramic by EDS. Because of the frequency dependence of the conductivity between 300 and 650 °C, the electrical conduction mechanisms of the BGTN−0.2Cr ceramic were attributed to the jump of the charge carriers. Based on the correlated barrier hopping (CBH) model, the maximum barrier height WM, dc conduction activation energy Ec, and hopping conduction activation energy Ep were calculated with values of 0.63 eV, 1.09 eV, and 0.73 eV, respectively. Impedance spectrum analysis revealed that the contribution of grains to the conductance increased with rise in temperature; at high temperatures, the conductance behavior of grains deviated from the Debye relaxation model more than that of grain boundaries. Calculation of electrical modulus further suggested that the degree of interaction between charge carriers β tended to grow larger with rising temperature. In view of the approximate relaxation activation energy (~1 eV) calculated from Z’’ and M’’ peaks, the dielectric relaxation process of the BGTN−0.2Cr ceramic was suggested to be dominated by the thermally activated motion of oxygen vacancies as defect charge carriers. Finally, a high piezoelectricity of d33 = 18 pC/N as well as a high resistivity of ρdc = 1.52 × 105 Ω cm at 600 °C provided the BGTN−0.2Cr ceramic with promising applications in the piezoelectric sensors with operating temperature above 600 °C.

show abstract

Crystal Structure, Microstructure, Piezoelectric and Dielectric Properties of Piezoceramic Bi7Sr2TiNb5O27

Zubkov,

Parinov,

Nazarenko

et al. 2024

Springer Proceedings in Materials

View full text Add to dashboard Cite

Crystal structure and dielectric properties of layered perovskite-like solid solutions Bi3−xGd_xTiNbO₉ (x=0, 0.1, 0.2, 0.3) with high Curie temperature

Cited by 6 publications

References 32 publications

New Piezoceramic SrBi2Nb2-2xWxSnxO9: Crystal Structure, Microstructure and Dielectric Properties

New Piezoceramic SrBi2Nb2-2xWxSnxO9: Crystal Structure, Microstructure and Dielectric Properties

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

Crystal Structure, Microstructure, Piezoelectric and Dielectric Properties of Piezoceramic Bi7Sr2TiNb5O27

Contact Info

Product

Resources

About