Crystal structure and electrical conductivity of Ga1.75Cr0.89S4

Haeuseler, H.; Kwarteng-Acheampong, W.; Jung, M.

doi:10.1016/0022-3697(88)90026-1

Cited by 6 publications

(1 citation statement)

References 4 publications

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“…Many layered Fe‐T sulfides have been synthesized in experiments. While FeGa 2 S 4 and NiGa 2 S 4 are isomorphic with 1:2:4 stoichiometry, for M = V/Cr, noninteger stoichiometric V 0.97 Ga 1.93 S 4 and Cr 0.9 Ga 2 S 4 are reported in Fe‐T structure, and for M = Mn/Co, their quaternary chalcogenides, such as MnGa x Ti 2− x S 4 , CoGa x In 2− x S 4 , and CoGa 2 S x Se 4− x , all exhibit Fe‐T phase under certain x ranges. Some other layered MGa 2 X 4 may exhibit Zn‐T phase, such as ZnIn 2 S 4 and CdIn 2 S 4 .…”

Section: Resultsmentioning

confidence: 99%

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Zhang

Duan

et al. 2019

Adv Funct Materials

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Searching for 2D ferromagnetic materials with a high critical temperature, large spin polarization, and controllable magnetization direction is a key challenge for their broad applications in spintronics. Here, through a systematic study on a series of 2D ternary chalcogenides with first-principles calculations, it is demonstrated that a family of experimentally available 2D CoGa 2 X 4 (X = S, Se, or Te) are half-metallic ferromagnets, and they exhibit high critical temperature, fully polarized spin state, and strain-dependent magnetization direction simultaneously. Following the Goodenough-Kanamori rules, the half-metallic ferromagnetism of CoGa 2 X 4 family is caused by superexchange interaction mediated by CoXCo bonds. The half-metal gaps are large enough (>0.5 eV) to ensure that the half-metallicity is stable against the spin flipping at room temperature. Magnetocrystalline anisotropy energy calculations indicate that CoGa 2 X 4 favor easy plane magnetization. Under achievable biaxial tensile strain (2-6%), the magnetization directions of CoGa 2 X 4 can change from in-plane to out-of-plane, providing a route to control the efficiency of spin injection/detection. Further, the critical temperatures T c of ferromagnetic phase transition for CoGa 2 X 4 are close to room temperature. Belonging to the big family of layered AB 2 X 4 compounds, the proposed CoGa 2 X 4 systems will enrich the available 2D candidates and their heterojunctions for various applications.

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Section: Resultsmentioning

confidence: 99%

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Zhang

Duan

et al. 2019

Adv Funct Materials

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Growth and characteristics of HgGaInS₄ single crystals

Moldovyan¹,

Chebotaru²

1990

Cryst. Res. Technol.

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Single crystals of the HgGaInS, layered compound were grown by the iodine transport technique. Results of their optical, photoelectric, and radiative properties' study are presented. The band gap and the binding energy of holes on the sensitizing centres were determined to be E, = 2.41 eV and E. = 0.2eV, respectively. A presence of quasi-continuously distributed states was stated which are responsible for the exponential segment of the absorption edge and which take part in the radiative recombination. Bupawem MOHOKPHCTaTUIbI CnoHCTOrO coemeHHa H,GaInS, MeTOnOM XEIMIIgeCKRX TpaHc-IIOPTHX peaKuuii B ~~M K H Y T O~~iiorptwoii clicTeMe. IIpmeneHu pe3ynwam rrccnenosamia HX OnTHqecKm, + o~o m e~~p w e c~~x H ~3 n y q a~e m~~~ CBOECTB. OnpeneneHa mipma s a n p e q e~~o i i 30m E , = 2,413B, H 31iepr~x C B R~H WPOK Ha o9yBcrBnrwm qempax E, = 0,2 3B. YcraHoBneao rianHwe B sanpewe~~oii 3 o~e Ksa3menpepbmio pacnpeneneRwrx COCTOXH&, xoiopue 06ycno~m-m n y q a~e m~o i i pe~o~6rma~1.mi.BaWT IIpOTXXeHHLdi 3KClIOHeHuHaJIbHL& Y'iaclOK Kpaff IIOrJIO~eHHn li IIpHHHMaIoT paCTHe B

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