Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation

A.I., Sidorov; Leks, E. Y.; O.A., Podsvirov; Vinogradov, A. Ya.

doi:10.21883/tp.2022.11.55178.180-22

Cited by 4 publications

(2 citation statements)

References 41 publications

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“…[15,16]. The broadening of the peaks at these frequencies is typical for the breathing modes C=C that are usually present in the amorphous carbon in the frequency range of 1330-1350 cm −1 [21,22] and are also characteristic of the effect of stretching C=C modes in a disordered graphite [23]. It is well known that amorphous sp 2 carbon exhibits vibrational features resulting in the overlap of the two main bands, G and D [24,25], and the formation of C=O bonds [8], which is typical of colloidal solutions of ShC.…”

Section: Characterization Of Raman Spectramentioning

confidence: 84%

Laser Fabrication of Gold–sp-Carbon Films

Kavokina,

Osipov,

Samyshkin

et al. 2023

Condensed Matter

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We develop a method for the laser synthesis and deposition of carbon–gold films formed by a net of linear sp-carbon chains and stabilized by gold nanoparticles. The originality of the method is in the simultaneous production of carbon chains and gold nanoparticles due to the laser fragmentation of the amorphous carbon and hydrogen tetrachloroaurate (III) or chloroauric acid. We study how surface resistivity alters the effect of the obtained films via the illumination in the visible spectral range.

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Section: Characterization Of Raman Spectramentioning

confidence: 84%

Laser Fabrication of Gold–sp-Carbon Films

Kavokina,

Osipov,

Samyshkin

et al. 2023

Condensed Matter

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“…An amorphous halo in the area 2θ = 7-11 • is not characteristic of silica and may correspond to the formation of a carbon structure in the material, which is close to the graphitopod phase or graphite oxide. The crystalline phase in area 7-11 • (d = 10.901; 10.463; 9.425; 8.400 Å) is typical for graphite oxide (GO) with crystallographic index 002 [28]. Graphite oxide is a product of variable composition consisting of hydrophilic layers (d = 6-12 Å) and intercalated water molecules [24].…”

Section: X-ray Diffraction Studiesmentioning

confidence: 99%

Synthesis and Characterization of Silicon–Carbon Powder and Its Resistance to Electron Irradiation

Pavlenko,

Cherkashina,

Edamenko

et al. 2023

J. Compos. Sci.

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The issue of crystallization of silicon oxide at low temperatures is a topical issue for the electronics of the future. Organosilicon oligomers and polymers are “ideal” sources for obtaining ultrapure silicon ceramics and silicon nanoparticles. This paper presents the results of the synthesis of highly dispersed silicon-carbon powder from an organohydrosiloxane oligomer and the method for increasing its crystallinity at low temperatures. The diffraction pattern of the resulting powder corresponds to the amorphous–crystalline state of the components in this material, as evidenced by two intense and broadened amorphous halos in the region of Bragg angles 2θ = 7–11° and 18–25°. The resulting silicon–carbon powder was subjected to electron irradiation (E = 10 MeV; D = 106–107 Gy). This paper presents the data on the changes in powder properties via IR-Fourier spectroscopy, X-ray phase analysis, and scanning electron microscopy. Irradiation with fast electrons with an absorbed dose of 106 Gy leads to a slight crystallization of the amorphous SiO2 phase. An increase in the absorbed dose of fast electrons from D = 106 to D = 107 Gy leads to the opposite effect. An amorphization of silica is observed. This study showed the possibility of the crystallization of a silicon–carbon powder without a significant increase in temperature, acting only with electron irradiation. It is necessary to continue further research on expanding the boundaries of the optimal doses of absorbed radiation from fast electrons in order to achieve the maximum effect of the crystallization of silicon–carbon powder.

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Magnetron carbon structures obtained by high-frequency magnetron sputtering in Argon and Nitrogen

Kuzmenko,

Kolpakov,

Sizov

et al. 2024

jour

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Purpose of research. Creation and characterization of carbon nanostructures by high-frequency magnetron sputtering from a carbon target in argon on a silicon substrate and in a reactive nitrogen environment, obtained on a Ni catalyst buffer layer. Methods. High-frequency magnetron sputtering on a silicon substrate with changes in control parameters: sputtering time power and working gas pressure Ar and N. Research was carried out using X-ray phase analysis, atomic force microscopy and holographic microscopy, Raman scattering. Results. The formation of carbon nanotubes, including single-walled ones, was confirmed by the method of Raman scattering of light along the lines ID 1363 and IG 1564 cm-1, as well as ωRDМ 308 and 227 cm–1. Using atomic force microscopic images, the fractal dimension of the nanofilms was calculated, which indicated their 3D nature. Based on X-ray phase analysis of magnetron nanofilms, the dimensions of the coherence region, texture, microdeformations and interplanar deformation distortions were determined. Conclusion. In carbon magnetron nanofilms, deformations of both signs occur: both compressive (∆a < 0) and tensile (∆a > 0). Carbon magnetron nanofilms are represented, among other things, by single-walled carbon nanotubes, the chirality of which in an argon environment is (6, 6), and in a reactive mixture of nitrogen and argon on a Ni buffer layer (7, 7). It was discovered that in high-frequency magnetron mode, silicon carbide is formed in both inert and reactive environments.

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Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation

Cited by 4 publications

References 41 publications

Laser Fabrication of Gold–sp-Carbon Films

Laser Fabrication of Gold–sp-Carbon Films

Synthesis and Characterization of Silicon–Carbon Powder and Its Resistance to Electron Irradiation

Magnetron carbon structures obtained by high-frequency magnetron sputtering in Argon and Nitrogen

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