Cs adsorption on oxide films (Al2O3, MgO, SiO2)

Brause, M.; Ochs, D.; Günster, Jens; Mayer, Tobias; Braun, Bernd M.; Puchin, V.E.; Maus‐Friedrichs, W.; Kempter, V.

doi:10.1016/s0039-6028(97)00174-x

Cited by 45 publications

(55 citation statements)

References 31 publications

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“…The respective peaks centered at $8 and 13 eV were characteristic of the O (2p) and Si-O related features. 36 From UPS, the electron affinity of SiO 2 on GaN was determined to be 1.1 6 0.1 eV, which is consistent with a prior study (1.1 eV) 37 and another group's result (1.3 eV). 32 The value of (E Si2s -E V ) SiO2 was calculated as 148.9 eV.…”

Section: Resultssupporting

confidence: 88%

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Yang

Eller

Nemanich

2014

Journal of Applied Physics

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The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga-and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH 4 OH treatment and an in-situ elevated temperature NH 3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at $1 monolayer on both Ga-and N-face GaN. In addition, Ga-and N-face GaN had an upward band bending of 0.8 6 0.1 eV and 0.6 6 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga-and N-face GaN. Furthermore, three dielectrics (HfO 2 , Al 2 O 3 , and SiO 2 ) were prepared by plasma-enhanced atomic layer deposition on Ga-or N-face GaN and annealed in N 2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO 2 , Al 2 O 3 , and SiO 2 with respect to Ga-and N-face GaN were 1.4 6 0.1, 2.0 6 0.1, and 3.2 6 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 6 0.1, 1.3 6 0.1, and 2.3 6 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states. V C 2014 AIP Publishing LLC.

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Section: Resultssupporting

confidence: 88%

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Yang

Eller

Nemanich

2014

Journal of Applied Physics

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“…For K, it is concluded that the adsorption occurs at step edges and/or other defects. This is consistent with reports of alkali adsorption on other materials, in which case the adatoms often form atomic chains, or "nanowires" [17]. We plan to follow up this work with scanning probe measurements to investigate this hypothesis.…”

Section: Summary Of the Most Important Resultssupporting

confidence: 87%

Low-Energy Ion Scattering as a Probe of Correlated Electrons at Surfaces

Yarmoff¹

2009

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“…Alkali atoms adsorbed to defects are present as almost completely ionized cations by transferring their valence electron to the surface [17,[36][37][38]. The adsorbed ionic atoms are repulsive to each other.…”

Section: Discussionmentioning

confidence: 99%

Classification of Light-Induced Desorption of Alkali Atoms in Glass Cells Used in Atomic Physics Experiments

Hatakeyama

Wilde

Fukutani

2006

e-J. Surf. Sci. Nanotechnol.

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We attempt to provide physical interpretations of light-induced desorption phenomena that have recently been observed for alkali atoms on glass surfaces of alkali vapor cells used in atomic physics experiments. We find that the observed desorption phenomena are closely related to recent studies in surface science, and can probably be understood in the context of these results. If classified in terms of the photon-energy dependence, the coverage and the bonding state of the alkali adsorbates, the phenomena fall into two categories: It appears very likely that the neutralization of isolated ionic adsorbates by photo-excited electron transfer from the substrate is the origin of the desorption induced by ultraviolet light in ultrahigh vacuum cells. The desorption observed in low temperature cells, on the other hand, which is resonantly dependent on photon energy in the visible light range, is quite similar to light-induced desorption stimulated by localized electronic excitation on metallic aggregates. More detailed studies of light-induced desorption events from surfaces well characterized with respect to alkali coverage-dependent ionicity and aggregate morphology appear highly desirable for the development of more efficient alkali atom sources suitable to improve a variety of atomic physics experiments.

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Cs adsorption on oxide films (Al2O3, MgO, SiO2)

Cited by 45 publications

References 31 publications

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Low-Energy Ion Scattering as a Probe of Correlated Electrons at Surfaces

Classification of Light-Induced Desorption of Alkali Atoms in Glass Cells Used in Atomic Physics Experiments

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