CsI(Tl) + photodiode scintillation assemblies for γ-ray and proton detectors

Kudina, A. M.; Borodenkoa, Yu. A.; Grinyova, B. V.; Didenkoa, A. V.; Dudnik, O. V.; Zaslavskya, B. G.; Valtonenc, E.; Eronenc, T.; Peltonend, J.; Lehtid, J.; Kettunene, H.; Virtanene, A.; Huovelin, J.

doi:10.1134/s0020441210010057

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…The detector head of the STEP-FD unit, constructed as a collimating system, contained two silicon position-sensitive detectors, namely D1 and D2, and two single-crystal CsI(Tl) scintillators, namely D3 and D4. The D3 scintillator was viewed by large-area silicon PIN photodiodes, and D4 was viewed by a vacuum photomultiplier tube [Kudin et al, 2010]. The bottom scintillation detector D4 in the telescope system of the STEP-FD unit detected secondary gamma quanta generated as a result of the interaction of electrons with the upper layers of detectors and construction materials.…”

Section: The Satellite Instrument Step-fmentioning

confidence: 99%

Detection of the third innermost radiation belt on LEO CORONAS-Photon satellite around 2009 solar minimum

Dudnik

Sylwester

Kowaliński

et al. 2022

Advances in Space Research

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Section: The Satellite Instrument Step-fmentioning

confidence: 99%

Detection of the third innermost radiation belt on LEO CORONAS-Photon satellite around 2009 solar minimum

Dudnik

Sylwester

Kowaliński

et al. 2022

Advances in Space Research

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“…For this test the samples were cut from initial part of ingot where the Tl C slightly increase from 0.096 to 0.134%. As a reference, the CsI:Tl, 3 IO scintillation material was chosen because this crystal is the most accessible, its radiation hardness satisfies most technical applications [22,23], and the material homogeneity allows one to make long samples. Data on radiation hardness are shown in Table 2.…”

Section: Crystals With Tlmentioning

confidence: 99%

“…Such decrease even less than for the reference. Tak-ing into account that formal requirement [23] to the light yield degradation is ( 0 L L ∆ ≤20%), it can be concluded that radiation hardness of CsI:Tl, 3 IO crystal is quite satisfactory and exceeds the γ-irradiation dose of 100 Gy.…”

Section: Crystals With Tlmentioning

confidence: 99%

SCINTILLATION CHARACTERISTICS OF HEAVILY DOPED CsI:Tl, IO3 CRYSTALS

Shpilinskaya¹,

Кudin²,

Trefilova³

et al. 2019

Problems of Atomic Science and Technology

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The effect of 3 IO− ions on spectrometric characteristic of CsI:Tl crystal has been considered. It has been shown that co-doping of CsI:Tl crystal by 3 IO− anions permits to obtain clear ingots with increased thallium concentration up to CTl ~ 0.9 mole % in which the concentration quenching of photo- or radioluminescence do not observed. It has been shown that the decay of solid solution in CsI:Tl, 3 IO crystals is not observed, at least up to CTl ~ 0.5 mole %, as evidenced by a good energy resolution (R = 6.3%) of samples with the specified Tl concentration and this also evidenced by a larger segregation coefficient of thallium in CsI:Tl, 3 IO crystals (k = 0.24 contrary to k = 0.19 in CsI:Tl). An explanation of thallium solid solution stability in CsI matrix has been proposed which based on experimental fact of complex formation. Compensation of elastic stresses of opposite sign due to complex formation results in preventing of nucleation for solid solution decay.

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Double junction photodiode for X-ray CMOS sensor IC

Cheng¹,

Sun²,

Han³

et al. 2014

J. Semicond.

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A CMOS compatible P+/Nwell/Psub double junction photodiode pixel was proposed, which can efficiently detect fluorescence from CsI(Tl) scintillation in an X-ray sensor. Photoelectric and spectral responses of P+/Nwell, Nwell/Psub and P+/Nwell/Psub photodiodes were analyzed and modeled. Simulation results show P+/Nwell/Psub photodiode has larger photocurrent than P+/Nwell photodiode and Nwell/Psub photodiode, and its spectral response is more in accordance with CsI(Tl) fluorescence spectrum. Improved P+/Nwell/Psub photodiode detecting CsI(Tl) fluorescence was designed in CSMC 0.5 μm CMOS process, CTIA (capacitive transimpedance amplifier) architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 × 8 pixel array and pixel pitch is 100 × 100 μm2. Testing results show the dark current of the improved P+/Nwell/Psub photodiode (6.5 pA) is less than that of P+/Nwell and P+/Nwell/Psub photodiodes (13 pA and 11 pA respectively). The sensitivity of P+/Nwell/Psub photodiode is about 20 pA/lux under white LED. The spectrum response of P+/Nwell/Psub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of CsI(Tl) in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V·m2/W or 5097e−/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons.

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CsI(Tl) + photodiode scintillation assemblies for γ-ray and proton detectors

Cited by 6 publications

References 13 publications

Detection of the third innermost radiation belt on LEO CORONAS-Photon satellite around 2009 solar minimum

Detection of the third innermost radiation belt on LEO CORONAS-Photon satellite around 2009 solar minimum

SCINTILLATION CHARACTERISTICS OF HEAVILY DOPED CsI:Tl, IO3 CRYSTALS

Double junction photodiode for X-ray CMOS sensor IC

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