CsPbBr<sub>3</sub> Quantum Dot Films with High Luminescence Efficiency and Irradiation Stability for Radioluminescent Nuclear Battery Application

Xu, Zhiheng; Tang, Xiaobin; Liu, Yunpeng; Zhang, Zhengrong; Chen, Wang; Li, Kai; Yuan, Zicheng

doi:10.1021/acsami.9b02425

Cited by 44 publications

(26 citation statements)

References 36 publications

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“…They display remarkably bright PL with dark red, bright red, orange, and bright green respectively, which is consistent with previously reported colors for equivalent composition samples. [52][53][54][55] In order to study the fluorescence properties of the thin films, we tested the PL and absorption spectra. In Figure 5b, the emission peak positions coincide well with the absorption edges.…”

Section: Resultsmentioning

confidence: 99%

High‐Stability Patterned CsPbI_xBr₃₋_x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

Jin

Song

Liu

et al. 2021

Advanced Optical Materials

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of optoelectronic devices such as solar cells, light-emitting diodes, lasers, photodetectors, and imagers. [1][2][3][4][5][6][7] These materials possess excellent photoelectric properties such as a tunable band gap, high optical absorption, long carrier diffusion length, and high carrier mobility. [8][9][10][11][12][13] Undoubtedly, various types of CsPbX 3 inorganic perovskite devices display satisfactory optoelectronic performance. However, in their practical application, there are still multiple obstacles to overcome, including poor stability, environmental pollution, high fabrication cost, and a complex technical process. [14][15][16][17] It is critical that a creative fabrication method capable of overcoming these issues is developed.Currently, the preparation of CsPbX 3 inorganic perovskite thin films predominantly relies on two traditional preparation methods. These are a liquid-phase reaction as used in spin coating and spray coating, etc., and a vapor-phase reaction such as chemical vapor deposition (CVD), and atmosphere reaction, etc. Both have inevitable shortcomings. In the liquid-phase method, precursor solution evaporation can cause poor surface coverage and internal channels which allow moisture into the internal structure, accelerating the decomposition of inorganic perovskite. [18] Furthermore, both liquid-phase and vapor-phase reactions cannot circumvent the production of large volumes of toxic gas from organic solutions and raw material evaporation, which are harmful to both the environment and workers. [19] In addition, some integrated optoelectronic devices including scintillators, display screens, and charge-coupled devices (CCD), require 2D high-precision arrays. [20] Whereas, their whole fabrication process based on traditional methods is quite expensive and complex, attributing to requirement of multistep positioning reaction of inorganic perovskite and advanced patterning techniques including E-beam lithography, photolithography, laser direct-write method, anodic aluminum oxide (AAO) template patterning, etc. [21][22][23] Consequently, adopting a solid-phase reaction method in place of traditional liquid-phase and vapor-phase reaction methods could essentially solve these issues.As we know, molecules vigorously diffuse under high temperature. Actually, only when molecule molar ratio of precursors are controlled exactly, and kept within a suitable reaction temperature, can a solid-phase reaction to produce CsPbX 3 inorganic perovskite be successful. Thus far, little attention has been paid Downsides such as pollution, stability, and cost limit the further optoelectronic applications of cesium lead halide inorganic perovskite thin films, prepared using traditional liquid-phase and vapor-phase reactions. This study investigates the preparation of inorganic perovskite CsPbI x Br 3−x (x = 0, 1, 2, 3) thin films based on a solid-phase reaction. Two solid-phase precursor thin films, with an appropriate thickness ratio, are deposited by pulsed laser deposition (PLD) and subsequently react under ...

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Section: Resultsmentioning

confidence: 99%

High‐Stability Patterned CsPbI_xBr₃₋_x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

Jin

Song

Liu

et al. 2021

Advanced Optical Materials

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“…The photoluminescence relative intensities at 520 nm reached the maximum when 20 mg of CdSe/ZnS QDs were completely dissolved in 8 mL of Emulsifier‐Safe liquid scintillator. The added QDs serve a dual function, which can not only effectively transfer the RL peak wavelength of the liquid scintillation, and also efficiently absorb fluorescent photons and improve the overall luminescence emission intensity 29‐31 . Moreover, the relative RL intensity of the Emulsifier‐Safe was enhanced with increasing tube voltage, but the peak wavelengths remained steady and unchanged.…”

Section: Resultsmentioning

confidence: 99%

Synergistic enhancement of CdSe / ZnS quantum dot and liquid scintillator for radioluminescent nuclear batteries

Zhang

Gamage

et al. 2020

Int J Energy Res

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Summary The feasibility of utilizing CdSe/ZnS quantum dots (QDs) in liquid scintillator radioluminescent nuclear batteries to improve battery performance was studied. The peak position of the radioluminescence emission spectra of liquid scintillator can be regulated by controlling the QD components. This method is suitable for obtaining a satisfactory spectral matching between fluorescence materials and photovoltaic devices to increase the output performance of the battery. In the experiment, CdSe/ZnS QDs were introduced into Emulsifier‐Safe liquid scintillator, and the output properties of radioluminescent nuclear batteries were investigated via X‐ray. Results indicate that the battery with 15 mg CdSe/ZnS QDs generated the best electric power under different tube voltages. To analyze the X‐ray radioluminescence effects of the liquid scintillator, the radioluminescence spectra of the Emulsifier‐Safe with and without CdSe/ZnS QDs were measured and compared. The spectral matching degree between the Emulsifier‐Safe with different concentrations of CdSe/ZnS QDs and the GaAs device was also analyzed by considering luminescence utilization in batteries. This framework can serve as a guide for the development of a radioluminescent material system for long‐lasting, high‐performance power supplies.

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“…This improvement is much greater than that using CsPbBr 3 NCs as the scintillator layer. 42 We also measured the operation and thermal stabilities of the assembled NBs. Thanks to the high stability of Cs 3 Cu 2 I 5 : Mn and the protection of polymer, the NB exhibited a robust power output that after working under ambient conditions with a total irradiation dose of 58.7 Gy (Fig.…”

Section: Characterization Of Nuclear Batterymentioning

confidence: 99%

Mn2+ Induced Significant Improvement and Robust Stability of Radioluminescence in Cs3Cu2I5 for High Performance Nuclear Battery

Zeng

Chen

et al. 2020

Preprint

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Fluorescent type nuclear battery (NB) consisting of scintillator and photovoltaic device (PVD) enables semipermanent power source for both small and large devices working under harsh circumstances without instant energy supply. In spite of the progress of device structure design, the development of scintillators with high light yield (LY) and longer emission wavelength catering to PVDs is far behind. Here, a novel Cs3Cu2I5: Mn scintillator, which exhibits an ultrahigh LY of ~ 67000 ph/MeV at an emission wavelength of 564 nm is presented, and this is the highest value at such a long wavelength based on low cost precursors. Besides, doping and intrinsic features endow Cs3Cu2I5: Mn with robust thermal stability and irradiation hardness that 71% or > 90% of the initial radioluminescence (RL) intensity can be maintained in an ultra-broad temperature range of 77 K-433 K or after a total irradiation dose of 38.7 Gy at 333 K, respectively. These superiorities allow the fabrication of an efficient and stable NB, which showed an output improvement of 337% respect to that without scintillator. Luminescence mechanisms including self-trapped exciton, energy transfer, and impact excitation are proposed for the dramatic RL improvement. It is expected that such a new and robust scintillator will open a window for the fields of NBs and radiography.

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CsPbBr₃ Quantum Dot Films with High Luminescence Efficiency and Irradiation Stability for Radioluminescent Nuclear Battery Application

Cited by 44 publications

References 36 publications

High‐Stability Patterned CsPbI_xBr₃₋_x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

High‐Stability Patterned CsPbI_xBr₃₋_x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

Synergistic enhancement of CdSe / ZnS quantum dot and liquid scintillator for radioluminescent nuclear batteries

Mn2+ Induced Significant Improvement and Robust Stability of Radioluminescence in Cs3Cu2I5 for High Performance Nuclear Battery

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CsPbBr3 Quantum Dot Films with High Luminescence Efficiency and Irradiation Stability for Radioluminescent Nuclear Battery Application

Cited by 44 publications

References 36 publications

High‐Stability Patterned CsPbIxBr3−x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

High‐Stability Patterned CsPbIxBr3−x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

Synergistic enhancement of CdSe / ZnS quantum dot and liquid scintillator for radioluminescent nuclear batteries

Mn2+ Induced Significant Improvement and Robust Stability of Radioluminescence in Cs3Cu2I5 for High Performance Nuclear Battery

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CsPbBr₃ Quantum Dot Films with High Luminescence Efficiency and Irradiation Stability for Radioluminescent Nuclear Battery Application

High‐Stability Patterned CsPbI_xBr₃₋_x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

High‐Stability Patterned CsPbI_xBr₃₋_x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction