Cu-doped nickel oxide hole transporting layer via efficient low-temperature spraying combustion method for perovskite solar cells

Liu, Yan; Song, Jian; Qin, Yongshan; Qiu, Qinyuan; Zhao, Yulong; Zhu, Lei; Ye, Qiang

doi:10.1007/s10854-019-01942-5

Cited by 13 publications

(6 citation statements)

References 28 publications

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“…The surface morphologies and root-mean-square (RMS) surface roughness of NiO x HTLs are vital for PSCs. As shown in Figure 4a,b, both films show a continuous, uniform, and crack-free surface, 47 with the substrates completely covered by the compacted NiO x (Cu:NiO x ) nanoparticles, which prevents the current leakage from perovskite layers. As shown in Figure 4a and the inset image, the surface morphology of the NiO x film deposited on FTO substrate is similar to that of the bare FTO surface.…”

Section: Resultsmentioning

confidence: 98%

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiO_x Hole-Transport Layers

Feng

Wang

Zhou

et al. 2020

ACS Appl. Mater. Interfaces

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High-quality hole-transport layers (HTLs) with excellent optical and electrical properties play a significant role in achieving high-efficient and stable inverted planar perovskite solar cells (PSCs). In this work, the optoelectronic properties of Cu-doped NiO x (Cu:NiO x ) films and the photovoltaic performance of PSCs with Cu:NiO x HTLs were systematically studied. The Cu-doped NiO x with different doping concentrations was achieved by a high-temperature solid-state reaction, and Cu:NiO x films were prepared by pulsed laser deposition (PLD). Cu+ ion dopants not only occupy the Ni vacancy sites to improve the crystallization quality and increase the hole mobility, but also substitute lattice Ni2+ sites and act as acceptors to enhance the hole concentration. As compared to the undoped NiO x films, the Cu:NiO x films exhibit a higher electrical conductivity with a faster charge transportation and extraction for PSCs. By employing the prepared Cu:NiO x films as HTLs for the PSCs, a high photocurrent density of 23.17 mA/cm2 and a high power conversion efficiency of 20.41% are obtained, which are superior to those with physical vapor deposited NiO x HTLs. Meanwhile, the PSC devices show a negligible hysteresis behavior and a long-term air-stability, even without any encapsulation. The results demonstrate that pulsed laser deposited Cu-doped NiO x film is a promising HTL for realizing high-performance and air-stable PSCs.

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Section: Resultsmentioning

confidence: 98%

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiO_x Hole-Transport Layers

Feng

Wang

Zhou

et al. 2020

ACS Appl. Mater. Interfaces

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“…Therefore, doping is not always conducive to hole extraction at the interface of NiO x and perovskite. Film surface modification [28][29][30][31] or various advanced film deposition methods [32][33][34][35][36] can be used to relieve charge recombination at charge transfer layer (CTL)/perovskite interface.…”

Section: Introductionmentioning

confidence: 99%

Charge transfer modification of inverted planar perovskite solar cells by NiO_x/Sr:NiO_x bilayer hole transport layer

et al. 2022

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Perovskite solar cells (PSCs) are the most promising commercial photoelectric conversion technology in the future. The planar p–i–n structure cells have advantages in negligible hysteresis, low temperature preparation and excellent stability. However, for inverted planar PSCs, the non-radiative recombination at the interface is an important reason that impedes the charge transfer and improvement of power conversion efficiency. Having a homogeneous, compact, and energy-level-matched charge transport layer is the key to reducing non-radiative recombination. In our study, NiO x /Sr:NiO x bilayer hole transport layer (HTL) improves the holes transmission of NiO x based HTL, reduces the recombination in the interface between perovskite and HTL layer and improves the device performance. The bilayer HTL enhances the hole transfer by forming a driving force of an electric field and further improves J sc. As a result, the device has a power conversion efficiency of 18.44%, a short circuit current density of 22.81 mA⋅cm−2 and a fill factor of 0.80. Compared to the pristine PSCs, there are certain improvements of optical parameters. This method provides a new idea for the future design of novel hole transport layers and the development of high-performance solar cells.

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“…Christians et al 40 initially introduced copper iodide (CuI) as an inorganic p-type HTM, and the corresponding device showed stable current output. Qin et al 41 fabricated a highefficient device using cuprous thiocyanate (CuSCN) as an efficient inorganic HTM. Nickel oxide (NiO), as an inorganic p-type semiconductor, had also been widely employed in PSCs.…”

Section: Introductionmentioning

confidence: 99%

Synergistic Effect of NiO and Spiro-OMeTAD for Hole Transfer in Perovskite Solar Cells

Zhao

Mou

Zhu

et al. 2021

J. Electron. Mater.

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2,2′,7,7′-Tetrakis (N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD), as a hole transporting layer (HTL), has been widely used in perovskite solar cells (PSCs), and adding lithium bis[(trifluoromethyl)sulfonyl]azanide (LiTFSI) is a common strategy to further enhance its hole mobility and conductivity. However, the use of this additive in spiro-OMeTAD can induce device instability. In this work, a composite HTL without harmful additives is proposed for a stable n-i-p structured PSC. The prepared nickel oxide (NiO) nanoparticles were first sprayed on perovskite film to form a porous NiO film, and spiro-OMeTAD solution was then filled in to construct composite HTL. The PSC using this composite HTL presents better photovoltaic performance than that using NiO and pristine spiro-OMeTAD, respectively, and also exhibits a much better working stability, retaining more than 82% of the initial performance after 200 h in air. We deduce that the enhanced charge transfer at the HTL/Perovskite interface could be induced by the synergistic effect between spiro-OMeTAD and NiO. This work proposes a strategy to construct HTL for PSCs using NiO and pristine spiro-OMeTAD bilayer, which is meaningful to improve photovoltaic performance and working stability of the device.

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Cu-doped nickel oxide hole transporting layer via efficient low-temperature spraying combustion method for perovskite solar cells

Cited by 13 publications

References 28 publications

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiO_x Hole-Transport Layers

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiO_x Hole-Transport Layers

Charge transfer modification of inverted planar perovskite solar cells by NiO_x/Sr:NiO_x bilayer hole transport layer

Synergistic Effect of NiO and Spiro-OMeTAD for Hole Transfer in Perovskite Solar Cells

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Cu-doped nickel oxide hole transporting layer via efficient low-temperature spraying combustion method for perovskite solar cells

Cited by 13 publications

References 28 publications

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiOx Hole-Transport Layers

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiOx Hole-Transport Layers

Charge transfer modification of inverted planar perovskite solar cells by NiO x /Sr:NiO x bilayer hole transport layer

Synergistic Effect of NiO and Spiro-OMeTAD for Hole Transfer in Perovskite Solar Cells

Contact Info

Product

Resources

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High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiO_x Hole-Transport Layers

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiO_x Hole-Transport Layers

Charge transfer modification of inverted planar perovskite solar cells by NiO_x/Sr:NiO_x bilayer hole transport layer