Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

Caballero, R.; Izquierdo-Roca, Víctor; Merino, J. M.; Friedrich, E. J.; Climent‐Font, A.; Saucedo, Edgardo; Pérez-Rodrı́guez, A.; León, M.

doi:10.1016/j.tsf.2012.10.028

Cited by 21 publications

(11 citation statements)

References 12 publications

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“…[19]. However, here a significant loss of Ge takes place, without observing a decrease in the Sn content.…”

Section: Cztgs Thin Films Coming From Evaporation Process Flashmentioning

confidence: 76%

“…CZTGS thin films were fabricated by a sequential, or twostage, process: evaporation followed by a thermal treatment. In the first stage, CZTGS thin films were deposited by flash evaporation [18] onto Mo coated glass and glass substrates using the compound in powder form at nominal substrate temperatures, T substr of 100º and 350º C. As previously reported [19], a preferential re-evaporation of Zn takes place during the flash evaporation process, leading to Zn-poor thin films. It was reported that, despite a Zn-rich precursor powder, a significantly decreased Zn-content was obtained after evaporation.…”

Section: Methodsmentioning

confidence: 99%

“…The different thermal treatments applied to the samples from experiment Flash 1 evaporated at T substr =100º C were not enough to achieve an atomic ratio of under Zn-rich conditions, and this imposed Zn-excess may lead to the formation of ZnS as a secondary phase [9,19]. GIXRD spectra of the Zn-richer sample after TT1 measured using different grazing incidence angles, show the characteristic peaks of the CZTGS material.…”

Section: Cztgs Thin Films Evaporated With a Zns Excess (Flash 2 And Fmentioning

confidence: 99%

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Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Caballero

Cano-Torres

Garcia-Llamas

et al. 2015

Solar Energy Materials and Solar Cells

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El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription On the other hand, it is still necessary to understand the role of the growth parameters to produce kesterite material with the optimum properties for maximum device efficiency. fabricated by a sequential, or two-stage, process: deposition of precursor followed by post-sulfurization/selenization. This is advantageous due to its capability and high throughput. However, it is also desirable to reduce the number of stages during the growth process.

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“…[19]. However, here a significant loss of Ge takes place, without observing a decrease in the Sn content.…”

Section: Cztgs Thin Films Coming From Evaporation Process Flashmentioning

confidence: 76%

Section: Methodsmentioning

confidence: 99%

Section: Cztgs Thin Films Evaporated With a Zns Excess (Flash 2 And Fmentioning

confidence: 99%

See 1 more Smart Citation

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Caballero

Cano-Torres

Garcia-Llamas

et al. 2015

Solar Energy Materials and Solar Cells

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“…A 12.6 % efficiency has been recently achieved for CZTSSe solar cells performed using a hydrazine-based pure solution approach [1]. Other different chemical and physical methods have been used for the preparation of CZTSSe thin films [2][3][4][5][6][7][8][9][10][11]. Among them, an efficiency of 9.2% has been reported on 5 x 5 cm 2 -sized Cu 2 ZnSnS 4 (CZTS)…”

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confidence: 99%

Band-gap engineering of Cu 2 ZnSn 1− x Ge x S 4 single crystals and influence of the surface properties

et al. 2014

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Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: change from 1.59 to 1.94 eV when the Ge content is increased from x = 0.1 to 0.5 as determined from spectroscopic ellipsometry measurements. This knowledge opens a route to enhance the performance of kesterite-based photovoltaic devices by a Ge-graded absorber layer. Furthermore, the formation of GeO 2 on the surface of the as-grown samples was detected by X-ray photoelectron spectroscopy, having an important impact on the effective optical response of the material. This should be also taken into account when designing photovoltaic solar cells.

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“…Some deficit of Zn is observed for the thin films in comparison to the content obtained for the crystal target. As it was observed for CZTS thin films grown by flash evaporation, the decreased Zn concentration after the sputtering can be related to its high partial pressure [26]. The Zn deficiency might be solved by an additional post annealing of the thin film in Zn atmosphere.…”

Section: Methodsmentioning

confidence: 75%

Preparation and optical characterization of Cu2ZnGeSe4 thin films

et al. 2015

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Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: substrates at a substrate temperature of 300 and 420 K. CZGSe films were characterized by Xray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy and by the method of normal incidence transmittance and reflectance. XRD studies reveal an improved crystallinity of the polycrystalline CZGSe films with tetragonal structure when the substrate temperature was increased. The refraction index and extinction coefficient were extracted from the optical measurements. Spectral dependence of absorption coefficient and the energy band gaps values of CZGSe films were also determined.

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Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

Cited by 21 publications

References 12 publications

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Band-gap engineering of Cu 2 ZnSn 1− x Ge x S 4 single crystals and influence of the surface properties

Preparation and optical characterization of Cu2ZnGeSe4 thin films

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