Current-Bunch Concept for Parasitic-Oriented Extraction and Optimization of Multichip SiC Power Module

Wang, Liang; Zeng, Zheng; Sun, Peng; Yu, Yue; Ou, Kaihong; Wang, Jin

doi:10.1109/tpel.2021.3054774

Cited by 10 publications

(5 citation statements)

References 12 publications

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“…In general, the design principles from different aspects are usually paradoxical. A simple example is that the distance between the paralleled chip is expected to be larger for better thermal performance, but smaller for better electrical performance [43]. Fig.…”

Section: Challenges From Designing Multidiscipline Of Multichip Power...mentioning

confidence: 99%

“…Passive methods are generally cost-friendly and no extra component is needed. It can be implemented amid fabrication, thus it is preferred by manufacturers [43]. Via continually improving the die screening strategy and optimizing package layout, the commercialized power modules are approaching ideal switches.…”

Section: Conclusion and Insight Of Current Sharing Strategiesmentioning

confidence: 99%

See 1 more Smart Citation

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Zhao

Wang

et al. 2023

IEEE Trans. Power Electron.

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Power semiconductor devices are often connected in parallel to increase the current rating of the power conversion systems. However, due to mismatched circuit parameters or semiconductor fabrication discrepancies, the current of paralleled power semiconductor devices can be unbalanced, which potentially leads to accelerated aging and long-term reliability issues. The fast-switching speed of silicon carbide (SiC) devices aggravates this problem due to its higher sensitivity to parasitic parameters. Numerous efforts have been dedicated to analyzing and addressing the current imbalance issue of paralleling SiC devices. This article comprehensively summarizes and presents state-of-the-art research regarding the current imbalance in paralleled SiC devices. Degree of imbalance is proposed to comprehensively quantify the current mismatch. Starting with mechanism analysis, different types of current imbalance are categorized. Various device parameters and the package layout that impact the current distribution are investigated. The existing solutions including passive methods and active methods are concluded and categorized. This work also incorporates insight into the future development needs of high-power multichip SiC module packaging and driving technologies.

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Section: Challenges From Designing Multidiscipline Of Multichip Power...mentioning

confidence: 99%

Section: Conclusion and Insight Of Current Sharing Strategiesmentioning

confidence: 99%

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Zhao

Wang

et al. 2023

IEEE Trans. Power Electron.

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“…Fig. 11 shows the difference between the extracted values of C ds from the datasheet and the corresponding charge Q Cds that was calculated, as well as the approximated charge calculated with (23). The approximated function of the electric charge is used as input for the LTspice simulation.…”

Section: Consideration Of the Nonlinear Capacitancesmentioning

confidence: 99%

“…2, the parasitic inductance L σ was modeled as a single inductance, which is sufficient for the analysis, but excludes the differentiation between self-and mutual inductance. In [23] it is stated that the self-inductance can be considered to be constant in high frequencies. The mutual inductance is not depending on the frequency, but presents a challenge to model accurately.…”

Section: Additional Influences 1) Influence Of Self-and Mutual Induct...mentioning

confidence: 99%

Analysis of the Zero Overvoltage Switching Phenomenon

2022

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In common understanding, the fast switching speed of wide-bandgap devices leads to high overvoltage and oscillations, if no countermeasures are taken. Those countermeasures were introduced in the past, and include methods such as build-in gate resistors or low-inductive power modules. There is, however, a physical limit for reducing the parasitic inductance of the commutation cell. This is one of the reasons why the full potential of wide-bandgap devices cannot be entirely utilized. In contrast, the Zero Overvoltage Switching (ZOS) phenomenon can be used to theoretically unleash unlimited switching speed with no switching losses and voltage overshoots. This method triggers the inherent parasitic oscillating elements of a commutation cell to perform an ideal current commutation. This article investigates the physical effects and usage of this technology in real-world applications. The model of an ideal commutation cell is adapted to reality by introducing damping factors as well as the nonlinear behaviour of the parasitic capacitances. An extended ZOS area is presented, including the parasitic capacitances of two wide-bandgap devices. It allows today's silicon carbide power modules to make use of the ZOS technology and perform at different power levels. Measurements with a commercially available power module were taken to verify the theoretical analysis and the derived equations.

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“…The PEV power system mainly consists of high-power electrical components, such as inverters [4], converters, high-voltage power harnesses, and power battery packs [5,6]. The compact space inside the PEVs brings the passengers closer to these high-power devices.…”

Section: Introductionmentioning

confidence: 99%

The Electromagnetic Exposure Level of a Pure Electric Vehicle Inverter Based on a Real Human Body

Dong,

Gao,

2023

Applied Sciences

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In order to quantitatively analyze the electromagnetic exposure dose of an inverter in a pure electric vehicle to the driver’s body and assess the safety of the electromagnetic exposure, based on a real human anatomy model in the virtual home project, a real human model with several organs and tissues, including muscles, bones, a heart, lungs, a liver, kidneys, a bladder, a skull, a scalp, white matter, and a cerebellum, was constructed. The inverter of a pure electric vehicle is considered to be the electromagnetic exposure source; for this study, an equivalent electromagnetic environment model composed of a real human body, an inverter, and a vehicle body was built. The distribution of induced fields in the driver’s tissues and organs was calculated and analyzed using the finite element method. The results show that the distribution of the magnetic flux density, induced electric field, and induced current density in the driver’s body was affected by the spatial distance of the inverter. The farther the distance was, the weaker the value was. Specifically, due to the different dielectric properties of the different tissues, the induced field in the different tissues was significantly different. However, the maximum magnetic flux density over the space occupied by the driver’s body and induced electric field in the driver’s trunk and central nervous system satisfied the exposure limits of the International Commission on Non-Ionization Radiation Protection, indicating that the electromagnetic environments generated by the inverter proposed in this paper are safe for the vehicle driver’s health. The numerical results of this study could also effectively supplement the study of the electromagnetic environments of pure electric vehicles and provide some references for protecting the drivers of pure electric vehicles from electromagnetic radiation.

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Current-Bunch Concept for Parasitic-Oriented Extraction and Optimization of Multichip SiC Power Module

Cited by 10 publications

References 12 publications

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Analysis of the Zero Overvoltage Switching Phenomenon

The Electromagnetic Exposure Level of a Pure Electric Vehicle Inverter Based on a Real Human Body

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