Current induced magnetization dynamics and magnetization switching in superconducting ferromagnetic hybrid (F|S|F) structures

Abstract

We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation modified with current induced Slonczewski's spin torque term. A modified form of Ginzburg-Landau free energy functional has been used for this purpose. We demonstrated the possibility of current induced magnetization switching in the spin-triplet ferromagnetic superconducting hybrid structures with strong easy axis anisotropy and the condition for magnetization reversal. The switching time for such arrangement is calculated and is found to be highly dependent on the magnetic configuration along with the biasing current. This study would be useful in designing practical superconducting-spintronic devices. PACS numbers: 67.30.hj, 74.90.+n

Spin transport and Spin Tunnelling Magneto-Resistance (STMR) of F|NCSC|F spin valve

“…To understand feasibility of ferromangetism and superconductivity, and also the role of magnetization in F|S hybrids, many superconducting spintronic SVs had been extensively studied theoretically [76][77][78][79][80][81][82][83][84][85][86] and experimentally [87][88][89][90][91][92][93][94][95][96]. Previous works on F|S heterostructure and superconducting SVs strongly indicates that the superconducting critical temperature is dependent on the orientation of magnetization.…”

Effect of Rashba spin–orbit coupling, magnetization, and mixing of gap parameter on tunneling conductance in F∣NCSC junction of an F∣NCSC∣F spin valve

“…It is known from the earlier works that the role of magnetization in F|S hybrid structures [46][47][48][49][50][51][52][53][54][55][56][57][58] is too significant. The transport properties and tunneling conductance in F|S (singlet) junction [46][47][48], F|S (triplet) junctions [49][50][51][52][53] and NCSC structures [54][55][56] have been studied earlier.…”

Spin Torque Oscillator and Magnetization Switching in Double Barrier Rashba Zeeman Magnetic Tunnel Junction

“…It is to be noted that the anisotropy of the system can be incorporated by considering an easy-axis anisotropy field H an = 1 2 Kanmy M0 ŷ in Eq. ( 1) [6]. The last term of Eq.…”

“…Spin torque oscillators (STOs) are nano-sized electronic devices based on magnetic tunnel junctions (MTJ) that have recently received considerable attention due to their wide range of applications [1][2][3][4][5][6][7][8][9][10][11][12]. STOs are essentially magnetoresistive stacks, where the polarized spin current generates the spin torque [1][2][3].…”

“…Thus, it leads to self-sustaining magnetization oscillations in the free layer. This characteristic of STOs can be utilized to use them as microwave generators, field sensors, phased array antennae etc [4][5][6][7][8][9][10][11][12]. Another essential phenomenon witnessed in an MTJ is magnetization switching, which is the backbone of current non-volatile magnetic memories [13][14][15][16][17].…”