Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe

Kress-Rogers, E.; Nicholas, R.J.; Portal, J. C.; Chévy, A.

doi:10.1016/0038-1098(82)90874-2

Cited by 114 publications

(63 citation statements)

References 19 publications

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“…3. This value turns out to be significantly larger than that obtained from zero field absorption measurements [4] or cyclotron resonance [10], which means that the contribution of the other terms cannot be neglected. If we assume the Zeeman splitting in InSe to close to the one in GaSe [11], which is of the order of 10 meV at 50 T, the effective mass value would be around 0.14m 0 which is closer to the above referred values in the literature.…”

Section: Resultsmentioning

confidence: 50%

High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

Millot

Gilliland

Broto

et al. 2009

Physica Status Solidi (b)

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We report here first magneto‐photoluminescence investigations under high pressure up to 6 GPa on III–VI layered semiconductor InSe. Both diamagnetism and magnetic field induced gap opening driven by Landau quantization became observable by using a 60 T pulsed magnet. The pressure‐induced enhancement of the diamagnetic coefficient is consistent with the increase of the dielectric constant under pressure while the evolution of the linear coefficient is consistent with a slight increase of the electron effective mass up to 4 GPa and a direct‐to‐indirect conduction‐band crossover around that pressure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 50%

High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

Millot

Gilliland

Broto

et al. 2009

Physica Status Solidi (b)

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“…(30) describe the spin-orbit splitting similar to Eq. (29). The magnitude of γ v according to a fit to the spin-orbit splitting in 1L-InSe for wave vectors less than 0.06 1/Å is γ v = 3.11(5) eVÅ 3 .…”

Section: -Band K · P Theory For N -Layer Inse and Interband Optimentioning

confidence: 93%

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

2016

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We present a tight-binding (TB) model and k · p theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all s and p valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono-and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the Γ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, N . We find a strong dependence on N of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations 1 . Also, we find that the conduction band electrons are relatively light (m ∝ 0.14 − 0.18me), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the Γ-point, which is found for up to N ∝ 6.

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“…Since the anisotropy of the electron effective mass is not large [14], we used a conventional three-dimensional expression to determine the density of state of the conduction band (m n /m o ) 3/2 (cm -3 ). A electron effective mass ratio m n /m o of 0.13 [15] and a degeneracy factor of g = 2 for the donor level were used in the equation. The curves fitted by using (2) are shown by the solid curves in Fig.…”

Section: Resultsmentioning

confidence: 99%

Impurity levels in layered semiconductor n‐InSe doped with Ge

Shigetomi

Ikari

2003

Physica Status Solidi (b)

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The impurity levels in Ge-doped n-InSe have been investigated by using photoluminescence (PL), photocurrent (PC), and Hall effect measurements. Two emission bands related with impurity level are observed at about 1.28 and 1.25 eV in PL spectra at 77 K. In addition to the results of temperature dependence of PC spectra and electron concentration, it is found that the 1.28 and 1.25 eV emission bands are associated with the donor levels at about 0.09 and 0.06 eV below the conduction band, respectively. The effect of excitation intensity of peak energy for the 1.25 eV emission band is characterized by the donor -acceptor recombination. The temperature dependence of mobility is influenced by adding an amount of Ge atom. The scattering mechanism of the 0.05 at.% Ge-doped sample can be well explained by the combined mechanism of the optical phonon, ionized impurity and neutral impurity scatterings.

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Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe

Cited by 114 publications

References 19 publications

High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

Impurity levels in layered semiconductor n‐InSe doped with Ge

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