Damage in solids irradiated by a single shot of XUV free-electron laser: Irreversible changes investigated using X-ray microdiffraction, atomic force microscopy and Nomarski optical microscopy

Pełka, J.; Sobierajski, R.; Klinger, D.; Paszkowicz, W.; Krzywiński, J.; Jurek, M.; Żymierska, D.; Wawro, A.; Petroutchik, A.; Juha, L.; Hájková, V.; Cihelka, J.; Chalupský, J.; Burian, T.; Vyšín, L.; Toleikis, S.; Sokolowski‐Tinten, K.; Stojanović, Nikola; Zastrau, U.; London, Richard A.; Hau‐Riege, Stefan P.; Davies, Robert L.; Burghammer, Manfred; Dynowska, E.; Szuszkiewicz, W.; Nietubyć, R.

doi:10.1016/j.radphyschem.2009.06.006

Cited by 11 publications

(7 citation statements)

References 10 publications

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“…For gold films surface melting with subsequent complete removal of the film was observed when exposed to XUV light from an LPP source [3]. Similar damage morphologies showing a step-like complete removal of the gold film were reported for a femtosecond pulse case [13].…”

Section: Introductionsupporting

confidence: 71%

Mechanism of single-shot damage of Ru thin films irradiated by femtosecond extreme UV free-electron laser

Milov¹,

Makhotkin²,

Sobierajski³

et al. 2018

Opt. Express

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Ruthenium is a perspective material to be used for XUV mirrors at free-electron laser facilities. Yet, it is still poorly studied in the context of ultrafast laser-matter interaction. In this work, we present single-shot damage studies of thin Ru films irradiated by femtosecond XUV free-electron laser pulses at FLASH. Ex-situ analysis of the damaged spots, performed by different types of microscopy, shows that the weakest detected damage is surface roughening. For higher fluences we observe ablation of Ru. Combined simulations using Monte-Carlo code XCASCADE(3D) and the two-temperature model reveal that the damage mechanism is photomechanical spallation, similar to the case of irradiating the target with optical lasers. The analogy with the optical damage studies enables us to explain the observed damage morphologies.

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Section: Introductionsupporting

confidence: 71%

Mechanism of single-shot damage of Ru thin films irradiated by femtosecond extreme UV free-electron laser

Milov¹,

Makhotkin²,

Sobierajski³

et al. 2018

Opt. Express

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“…Modern free-electron lasers (FELs) producing photons in ultraviolet and x-ray range can generate intense pulses that trigger phase transformations in solids during a single shot [9,10]. Brilliant light sources like FLASH [11], LCLS [12], SACLA [13], and FERMI [14] provide pulses with the duration ranging from a few up to a few tens of femtoseconds.…”

Section: Introductionmentioning

confidence: 99%

Transient optical properties of semiconductors under femtosecond x-ray irradiation

Tkachenko

Medvedev

et al. 2016

Phys. Rev. B

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Semiconductors under femtosecond x-ray irradiation are transiently excited to nonequilibrium states. This can lead to observable material modifications. During the excitation and relaxation dynamics, optical properties of the solid are changing, affected by both transient electron excitation as well as the evolution of the atomic structure. In this paper we apply a unified hybrid model to trace these two effects. Transient evolution of the optical properties is calculated within the transferable tight-binding approach. The presented methodology of calculation of the complex dielectric function proves to be capable of describing changes in the optical parameters during the phase transitions, when the solids are driven out of equilibrium by intense laser pulses, in a reasonable agreement with experiments.

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“…For silicon, phase transition mechanisms induced with a single femtosecond and monochromatic pulse of wavelength in the range of XUV and X-ray were studied previously, mainly with an angle of incidence close to surface normal. Bulk crystals [5,[7][8][9][10][11][12][13] together with a-Si layers in Si/C and Mo/Si multilayer systems [14,15] have been examined. These measurements have shown that single shot structural modifications are caused by melting.…”

Section: Introductionmentioning

confidence: 99%

Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate

et al. 2016

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Abstract:The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm 2 . Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm 2 ) and liquid state (54 mJ/cm 2 ), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.

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Damage in solids irradiated by a single shot of XUV free-electron laser: Irreversible changes investigated using X-ray microdiffraction, atomic force microscopy and Nomarski optical microscopy

Cited by 11 publications

References 10 publications

Mechanism of single-shot damage of Ru thin films irradiated by femtosecond extreme UV free-electron laser

Mechanism of single-shot damage of Ru thin films irradiated by femtosecond extreme UV free-electron laser

Transient optical properties of semiconductors under femtosecond x-ray irradiation

Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate

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