Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

Abstract

InAs/GaSb Type II Superlattice (T2SL) has become a highly competitive material for Infrared (IR) detector. We designed a pπMn mid-wavelength infrared detector based on the InAs/GaSb T2SL materials and studied the influence of the detector structural parameters on the dark current density magnitude and the Quantum Efficiency (QE) from the theoretical simulation level. Through the simulation of the detector material and structure, the dark current density characteristics at various doping concentrations, the dark current density characteristics and QE at different superlattice material thicknesses, and the temperature dependence of the dark current level are calculated. The M-structure barrier is inserted in between the π and n layers of the T2SL infrared detector structure, and the overall dark current level can be effectively reduced. Under the condition of 77 K, according to the final simulation data results, the dark current density can achieve 9.46×10-8 A/cm2, and the peak QE can achieve 34.3%.